High-gravity (g) acceleration sensor in plane of micro-electromechanical system (MEMS) based on resonance tunnelling structure (RTS)

An acceleration sensor, silicon-based technology, applied in the field of MEMS sensors, can solve the problems that detection results are easily affected by temperature, difficult to integrate sensors in three axes, difficult to measure acceleration, etc., and achieve good resistance to high overload, good sensitivity, and not easy to fail. Effect

Inactive Publication Date: 2011-08-03
ZHONGBEI UNIV
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Problems solved by technology

[0004] The present invention provides an RT

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  • High-gravity (g) acceleration sensor in plane of micro-electromechanical system (MEMS) based on resonance tunnelling structure (RTS)
  • High-gravity (g) acceleration sensor in plane of micro-electromechanical system (MEMS) based on resonance tunnelling structure (RTS)
  • High-gravity (g) acceleration sensor in plane of micro-electromechanical system (MEMS) based on resonance tunnelling structure (RTS)

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[0020] Such as figure 1 As shown, the RTS-based MEMS in-plane high-g acceleration sensor includes a silicon-based frame 1, a mass 2 suspended in the silicon-based frame 1, and one side of the mass 2 is fixed to the silicon-based frame 1 by an independent support beam 3. The opposite side is fixed to the silicon-based frame 1 by two parallel composite beams, the independent support beam 3 is parallel to the composite beam, and the independent support beam 3 is arranged along the center line of the mass 2 and the two composite beams take the center line of the mass 2 as the symmetry axis Symmetrical arrangement; the composite beam includes a detection beam 5, two connecting beams 4 fixed at both ends of the detection beam 5 to realize the detection beam 5 and the mass 2, the silicon-based frame 1, the detection beam 5 is provided with strain pressure Sensitive element 6, the thickness and width of the detection beam 5 are smaller than the connecting beam 4; the independent support...

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Abstract

The invention relates to a sensor of a micro-electromechanical system (MEMS), in particular to a high-gravity (g) acceleration sensor in a plane of the MEMS based on a resonance tunnelling structure (RTS), which solves the problems that the structure of the conventional MEMS high-g acceleration sensor cannot realize horizontal acceleration measurement and a detection result is easy to influence by a temperature. The high-g acceleration sensor in the plane of the MEMS based on the RTS comprises a silicon-based frame and a quality block, wherein two sides of the quality block are fixed with the silicon-based frame respectively by an independent supporting beam and two combination beams; the independent supporting beam is arranged along a central line of the quality block; the two combination beams are symmetrical about the central line of the quality block which is taken as a symmetry axis; each combination beam comprises a detection beam and two connection beams; a strain pressure sensitive element is arranged on the detection beam; the thickness and width of the detection beam are smaller than those of the connection beams; and the independent supporting beam, the quality block and the connection beams in the combination beams are equal in thickness. The acceleration sensor can realize the horizontal acceleration measurement and is reasonable and simple in structure, simple in process, and less influenced by an environmental temperature, works normally in a high-temperature environment, realizes three-axis integration easily and is applied to measurement of an impaction acceleration with a high-g value.

Description

technical field [0001] The invention relates to MEMS sensors, in particular to a MEMS in-plane high-g acceleration sensor based on RTS (resonance tunneling structure). Background technique [0002] The structure of the existing MEMS high-g acceleration sensor mostly adopts the cantilever beam-mass structure, and the sensitive element is set on the cantilever beam, and the acceleration is sensed by the mass block. It is mainly used to measure the acceleration in the direction perpendicular to the plane where the sensor is located, that is, when the sensor is subjected to the acceleration perpendicular to itself, the mass block will produce a displacement corresponding to the acceleration in the direction of acceleration, and the cantilever beam will be bent and deformed at this time , and produce tensile stress (or compressive stress) on its surface, which in turn causes the resistance value of the sensitive element on the surface of the cantilever beam to increase (or decrea...

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Application Information

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IPC IPC(8): G01P15/18B81B3/00G01P15/14
Inventor 刘俊石云波唐军赵锐张贺
Owner ZHONGBEI UNIV
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