Manufacturing method of semiconductor device

Abstract

The invention discloses a manufacturing method of a semiconductor device. The method comprises the following steps of: removing a pseudo-gate stack in the process of preparing a complementary metal-oxide-semiconductor (CMOS) transistor by using a replacement gate or gate last process; forming an L-shaped sidewall and a second sidewall on the L-shaped sidewall in a first opening which is formed after the pseudo-gate stack is removed; redefining the size of a replacement gate to play a role in adjusting the overlapped capacitance of a replacement gate stack and a source/drain region and a source/drain extension region; and forming a replacement sidewall by a sidewall of a gate electrode in the replacement gate stack, so that the overlapped capacitance of the sidewall and the source/drain region and the source/drain extension region is further reduced, and the whole overlapped capacitance of the device is further reduced. Furthermore, a device with a smaller size is obtained by a processmethod which is easier to implement.

Description

technical field [0001] The present invention generally relates to a manufacturing method of a semiconductor device, in particular to a manufacturing method of a semiconductor device based on a gate replacement process / gate-last process with smaller device size and small overlapping capacitance. Background technique [0002] With the development of semiconductor technology, integrated circuits with higher performance and stronger functions require greater component density, and the size, size and space of each component, between components or each component itself also need to be further reduced. In 45nm and below process integration, gate-front process and gate replacement process / gate-last process are widely used. For the gate replacement process, a typical process includes forming a dummy gate, followed by forming source / drain extensions, spacers, and source / drain regions, then removing the dummy gate of the device to form an opening, and then forming a replacement gate st...

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Problems solved by technology

For the gate replacement process, a typical process includes forming a dummy gate, followed by forming source / drain extensions, sidewalls, and source / drain regions, then removing the dummy gate of the device to form an opening, and then forming a replacement gate stack in the opening, The advantage of this process is that the replacement gate stack is formed after the generation of the source and drain. In this process, the gate dielectric layer and gate electrode in the replacement gate stack do not need to withstand a high annealing temperature, avoiding a high thermal budget. The possible work function transfer of the device is caused, but this process is difficult to accurately control the overlapping capacitance of the sidewall and the gate electrode and the source / drain region and the source / drain extension region, and with the continuous reduction of the gate size, the patterning The gate will become increasingly difficult

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