Laterally diffused metal oxide semiconductor transistor and method of fabricating the same

Abstract

The invention provides a laterally diffused metal oxide semiconductor transistor and a method of fabricating the same. The method of fabricating a laterally diffused metal oxide semiconductor (LDMOS) transistor includes forming a dummy gate over a substrate. A source and a drain are formed over the substrate on opposite sides of the dummy gate. A first silicide is formed on the source. A second silicide is formed on the drain so that an unsilicided region of at least one of the drain or the source is adjacent to the dummy gate. The unsilicided region of the drain provides a resistive region capable of sustaining a voltage load suitable for a high voltage LDMOS application. A replacement gate process is performed on the dummy gate to form a gate. The fabricating method provided by the embodiment has a better technical control without formation of silicide in the gate area.

Description

technical field [0001] The invention relates to an integrated circuit device, in particular to a laterally diffused metal oxide semiconductor (LDMOS) transistor. Background technique [0002] At present, laterally diffused metal-oxide-semiconductor transistors have been widely used in radio frequency (RF) / microwave fields. For example, when applied to a power amplifier, high output power is required. Therefore, there is a need for a laterally diffused metal-oxide-semiconductor transistor that is capable of withstanding high voltages and increased currents. The laterally diffused metal-oxide-semiconductor transistor using polysilicon / silicon oxynitride gate stacks has the problem of difficult control of silicide formation on the gate, resulting in the formation of partially silicided gates during the silicidation process. Therefore, the industry urgently needs a novel laterally diffused metal-oxide-semiconductor transistor and a manufacturing method thereof. Contents of t...

AI Technical Summary

Problems solved by technology

Laterally diffused metal oxide semiconductor transistors using polysilicon / silicon oxynitride gate stacks have poor control of silicide formation on the gate, resulting in partially silicided gates during the silicidation process

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