A method of forming a contact hole
A contact hole and contact etching stop technology, which is applied in the manufacturing of electrical components, electric solid-state devices, and semiconductor/solid-state devices, etc., can solve the problems of overall device performance degradation, scrapped MOS tubes, and increased leakage of metal oxide semiconductors. Achieve the effect of improving performance and improving yield
Active Publication Date: 2016-02-03
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
The plasma damage generated on the gate oxide layer will increase the leakage of the metal oxide semiconductor (MOS) tube, and in severe cases, it will cause the scrapping of the MOS tube
Especially when the IC technology reaches below the 65nm node, the plasma damage effect will cause damage to various other devices, resulting in a decrease in the overall performance of the device
Method used
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[0028] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.
[0029] In order to thoroughly understand the present invention, detailed steps will be presented in the following description to explain how the present invention uses a high-k material layer to solve the problem of plasma damage caused when forming contact holes. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions. ...
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The invention provides a method for forming a contact hole, which comprises the following steps: providing a front end device layer; forming a protective layer at the other side of the front end device layer which is opposite to one side of the front end device layer, which is manufactured with a device structural layer; depositing a contact etch stopping layer on the surface of the front end device layer; forming an interlayer dielectric layer on the surface of the contact etch stopping layer; forming a photoresist layer with a pattern on the surface of the interlay dielectric layer; and taking the photoresist layer with the pattern as a masking film to etch the interlayer dielectric layer and forming and form the contract hole.
Description
technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for forming a contact hole. Background technique [0002] As semiconductor manufacturing technology becomes more and more sophisticated, integrated circuits are also undergoing major changes, making the computing performance and storage capacity of computers advance by leaps and bounds, and driving the rapid development of peripheral industries. The process of manufacturing semiconductor integrated circuit chips uses batch processing technology to form various types of complex devices on the same silicon substrate and connect them to each other to have complete electronic functions. In order to make enough metal interconnection on the limited chip surface and increase the integration of the circuit, most of the three-dimensional structure of multilayer interconnection is currently used to complete the connection between various components, and between the wires. ...
Claims
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IPC IPC(8): H01L21/768H01L21/336H01L27/04H01L27/105
Inventor 张海洋韩宝东符雅丽
Owner SEMICON MFG INT (SHANGHAI) CORP