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Radiation-sensitive resin composition

A resin composition and a sensitive technology, applied in the field of chemically amplified radiation-sensitive resin compositions, can solve problems such as difficulty in using aromatic compounds, and achieve excellent pattern collapse characteristics, wide depth of focus, and excellent development defect performance. Effect

Active Publication Date: 2011-08-10
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when using a shorter wavelength light source such as ArF excimer laser (wavelength 193nm) as a light source for finer processing, it is difficult to use aromatic compounds such as PHS that exhibit large absorption in the 193nm region

Method used

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Examples

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Embodiment

Synthetic example 1

Synthetic example 2～31

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PUM

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Abstract

A radiation-sensitive resin composition includes (A) a polymer, (B) a photoacid generator, (C) an acid diffusion controller, and (D) a solvent, the polymer (A) including a repeating unit (a-1) shown by the following general formula (a-1), and the acid diffusion controller (C) including at least one base selected from (C-1) a base shown by the following general formula (C-1) and (C-2) a photodegradable base. wherein R 1 individually represent a hydrogen atom or the like, R represents a monovalent group shown by the above general formula (a'), R 19 represents a chain-like hydrocarbon group having 1 to 5 carbon atoms or the like, A represents a divalent chain-like hydrocarbon group having 1 to 30 carbon atoms or the like, m and n are integers from 0 to 3 (m+n=1 to 3), and R 2 and R 3 individually represent a monovalent chain-like hydrocarbon group having 1 to 20 carbon atoms or the like, provided that the two R 2 may bond to form a ring structure.

Description

technical field The present invention relates to a radiation-sensitive resin composition used in the production process of semiconductors such as ICs, the production of circuit boards such as liquid crystals and thermal heads, and other photolithography processes. More specifically, it relates to chemically amplified radiation sensitivity that can be suitably used in a photolithography process using extreme ultraviolet light with a wavelength of 250 nm or less such as KrF excimer laser or ArF excimer laser, or electron beams as an exposure light source. resin composition. Background technique The chemically amplified radiation-sensitive resin composition is a composition in which an acid is generated at the exposed portion by irradiation with extreme ultraviolet rays represented by KrF excimer laser or ArF excimer laser, or electron rays, and by using the acid as a catalyst The chemical reaction of the exposed part and the unexposed part produces a difference in the dissolu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/039C08F20/26G03F7/004
CPCG03F7/0397C08F220/28G03F7/2041C08F20/28C08F220/18C08F220/283C08F220/1807C08F220/1806C08F220/1812C08F220/1811C08F220/1808C08F20/10C08L33/04G03F7/0045G03F7/027
Inventor 江畑琢磨中川大树松田恭彦笠原一树星子贤二中岛浩光池田宪彦酒井香织原田早纪
Owner JSR CORPORATIOON
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