Method for controlling seeding form in process of preparing large-sized sapphire single crystal by Kyropoulos method

A control method and large-scale technology, applied in the directions of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of low yield of crystal growth, limited popularization and application, etc., and achieve high-quality growth crystals and broad application prospects. , the effect of improving quality

Active Publication Date: 2011-08-17
HARBIN AURORA OPTOELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the Kyropoulos method can produce optical-grade large-size sapphire crystals with a weight greater than 31kg, or even greater than 85kg

Method used

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  • Method for controlling seeding form in process of preparing large-sized sapphire single crystal by Kyropoulos method
  • Method for controlling seeding form in process of preparing large-sized sapphire single crystal by Kyropoulos method

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0020] Embodiment 1: The specific process of this embodiment is as follows:

[0021] 1. Preparations: (1) Put 31 kg of high-purity alumina raw materials with a purity of 99.996% into the single crystal furnace crucible, install a 12mm diameter seed crystal on the seed rod, close the single crystal furnace cover, and start Cooling water circulation system; (2) Start the vacuum system to make the pressure in the furnace reach 10 -3 Pa. (3) Start the heating system, adjust the heating voltage, and heat to increase the temperature. When the temperature reaches 2150℃, stop heating. At this time, all the raw materials are melted; after keeping the temperature for 3 hours, adjust the heating voltage and reduce the temperature to 2060℃, and observe the state of the melt level At this time, the liquid surface is stable, and the relative deviation between the cold center position in the melt and the geometric center of the crucible is less than 15mm; (4) Start the auxiliary temperature adj...

Example Embodiment

[0025] Embodiment 2: The specific process of this embodiment is as follows:

[0026] 1. Preparation: (1) Put 85 kg of high-purity alumina raw material with a purity of 99.996% into the single crystal furnace crucible, install a seed crystal with a diameter of 18mm on the seed rod, close the single crystal furnace cover, and start Cooling water circulation system; (2) Start the vacuum system to make the pressure in the furnace reach 10 -3 Pa. (3) Start the heating system, adjust the heating voltage, and increase the temperature. When the temperature reaches 2150°C, stop heating. At this time, all the raw materials are melted; after keeping the temperature for 5 hours, adjust the heating voltage and lower the temperature to 2060°C and observe the state of the melt level At this time, the liquid surface flow state is stable, and the relative deviation between the cold center position in the melt and the geometric center of the crucible is 30 mm; (4) The auxiliary temperature adjustm...

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Abstract

The invention provides a method for controlling seeding form in process of preparing a large-sized sapphire single crystal by a Kyropoulos method. By using the method, four technical processes of preparation work, roasting a seed crystal, diameter shrinkage and multiple-seeding are finished in the process of growing the large-sized sapphire single crystal. Based on a Kyropoulos seeding method, the method is greatly improved and has the advantages that a grown crystal has higher quality and larger size, the success rate of the crystal growing is higher and the like.

Description

[0001] (1) Technical field [0002] The invention relates to a sapphire industrial production technology, in particular to a seeding method in the process of growing a sapphire single crystal. (2) Background technology [0003] Sapphire, also known as white sapphire, is the crystal material whose hardness is second only to diamond in the world. Due to its excellent physical, mechanical, chemical and infrared light transmission properties, it has always been an urgently needed material in the fields of microelectronics, aerospace, military industry, etc., especially Optical-grade large-size sapphire material has become a hot spot in research and development and industrialization at home and abroad in recent years due to its characteristics of stable performance, large market demand, comprehensive utilization rate and high product added value. [0004] my country has proposed the "National Semiconductor Lighting Project" plan since 2003, and has initially formed a large-scale ...

Claims

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Application Information

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IPC IPC(8): C30B29/20C30B15/22
Inventor 左洪波杨鑫宏
Owner HARBIN AURORA OPTOELECTRONICS TECH
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