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Strontium titanate/P-type silicon heterojunction-based electroluminescent device and preparation method thereof

An electroluminescent device and heterojunction technology, which is applied in the field of optoelectronics and can solve the problems that electroluminescent devices have not been reported.

Inactive Publication Date: 2011-08-17
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although SrTiO 3 The photoluminescence of many reports, but based on SrTiO 3 Electroluminescent (EL) devices have not yet been reported

Method used

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  • Strontium titanate/P-type silicon heterojunction-based electroluminescent device and preparation method thereof
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  • Strontium titanate/P-type silicon heterojunction-based electroluminescent device and preparation method thereof

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Embodiment Construction

[0015] Such as figure 1 As shown, an electroluminescent device includes a substrate 1. A light-emitting layer 2 and an electrode layer 3 are sequentially deposited on the front of the substrate 1, and an ohmic contact electrode 4 is deposited on the back of the substrate 1. The substrate 1 has a thickness of 675 microns and a size 15×15mm 2 , The resistivity is about 0.001 ohm·cm. The light-emitting layer is SrTiO 3 The film has a thickness of about 120 nm, the electrode layer is an ITO film with a thickness of 150 nm, and the ohmic contact electrode 4 is an Al film with a thickness of 150 nm.

[0016] The following is the preparation method of the above device:

[0017] (1) Dissolve strontium nitrate in deionized water and add it to ethylene glycol methyl ether, add an appropriate amount of ethylene glycol to obtain solution 1; dissolve butyl titanate in ethylene glycol methyl ether, add an appropriate amount of acetylacetone to obtain a solution 2; Add solution 2 to solution 1 d...

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Abstract

The invention discloses a strontium titanate (SrTiO3) / P-type silicon heterojunction-based electroluminescent device and a preparation method thereof. The device comprises a substrate, wherein a light emitting layer and an electrode layer are deposited on the front surface of the substrate; an ohmic contact electrode is deposited on the back surface of the substrate; the substrate is a P-type silicon wafer; and the light emitting layer is a SrTiO3 film. The electroluminescent device can emit light under a certain forward bias (namely a transparent conductive film on the front surface is connected with a negative voltage and the ohmic electrode on the back surface of the silicon wafer is connected with a positive voltage); and the light wavelength covers near ultraviolet and visible light areas.

Description

Technical field [0001] The invention belongs to the field of optoelectronic technology. It relates to an electroluminescent device based on strontium titanate / P-type silicon heterojunction and a preparation method. Background technique [0002] Currently, III-V semiconductors are the basic materials of electroluminescent devices. If semiconductor lighting can be used on a large scale, the use of III-V semiconductors will increase dramatically. In this case, Ga and In, which are indispensable for III-V semiconductors, will face the limitation of scarcity of resources. Therefore, exploring light-emitting devices based on other semiconductors that are more advantageous in terms of resources has important practical significance. [0003] SrTiO 3 It is an indirect band gap semiconductor with a band gap of about 3.27 eV at room temperature. In the late 1960s, Stokowski and others from Stanford University started SrTiO 3 Luminescence study (S.E. Stokowski and A.L. Schawlow, Phys. Rev....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/26H01L33/00
Inventor 马向阳
Owner ZHEJIANG UNIV