Method for manufacturing a mask having submillimetric apertures for a submillimetric electrically conductive grid, and mask and submillimetric electrically conductive grid

Abstract

The invention relates to a method for manufacturing a mask having submillimetric apertures (1, 10), wherein: a first solution of colloidal nanoparticles in a first solvent is deposited for a mask layer, the particles having a given vitreous transition temperature Tg; the mask layer, referred to as the first mask layer, is dried at a temperature lower than said temperature Tg until a mask having a two-dimensional array of submillimetric apertures is obtained, having a substantially straight edge and defining a so-called array mask area; a solid mask area is formed through liquid deposition of a second mask layer onto the surface thereof, the solid mask area being adjacent and contacting the array mask area; and / or at least one cache area is formed, said cache area contacting the array mask area; and / or a mask area, filled through liquid filling of the apertures of a part of the array mask area, is formed after drying the first mask layer. The invention also relates to the mask and to the electrically conductive grid thus obtained.

Description

technical field [0001] The present invention relates to a method for preparing a mask with submillimeter openings for producing a submillimeter conductive grid, to the mask and to the grid obtained therefrom. Background technique [0002] Production techniques are known which enable obtaining metal grids of micron size. The advantage of these technologies is that a surface resistance of less than 1 ohm / square can be obtained while maintaining a light transmittance of about 75-85% (T L ). However, the production of these grids is based on the etching of metal layers by photolithography, which entails high costs not in keeping with the intended application. [0003] Document US 7172822 itself describes the preparation of irregular network conductors based on the use of fractured silica sol-gel masks. In the example in which it was performed, a sol based on water, ethanol and a silica precursor (TEOS) was precipitated, the solvent was evaporated, and the precipitate was anne...

AI Technical Summary

Problems solved by technology

[0006] This method of making electrodes using cleavage of a sol-gel mask forms an alternative to network conductor fabrication methods by eliminating, for example, reliance on photolithography (exposing the resist to radiation / beam and making it visible). Recognized progress, but the method needs to be improved, especially to match industry requirements (reliability, simplification and / or reduction of production steps, cost reduction, etc.)

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