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One time programmable (OTP) resistive random access memory (RRAM) as well as read-write circuit and programming method thereof

A technology of random access memory and read-write circuit, applied in the field of read-write circuit, can solve the problems of low safety performance and small area of ​​OTP memory data storage, and achieve the effects of low power consumption, simple pulse signal, and small area

Inactive Publication Date: 2011-08-31
FUDAN UNIV
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0006] The technical problem to be solved by the present invention is, based on the low security performance of the existing OTP memory data memory, and the low power consumption and small area requirements of the OTP memory embedded application, a kind of OTP resistance random access memory, read and write circuit and its programming are proposed method

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  • One time programmable (OTP) resistive random access memory (RRAM) as well as read-write circuit and programming method thereof
  • One time programmable (OTP) resistive random access memory (RRAM) as well as read-write circuit and programming method thereof
  • One time programmable (OTP) resistive random access memory (RRAM) as well as read-write circuit and programming method thereof

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Embodiment Construction

[0036] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0037] figure 1 Shown is a schematic structural diagram of the OTP resistance random access memory provided by the embodiment of the present invention. Such as figure 1As shown, the OTP resistance random access memory 10 of a memory cell is given. The OTP RRAM 10 includes a first storage resistor 11 , a first gate transistor 12 connected in series with the first storage resistor, a second storage resistor 13 , and a second gate transistor 14 connected in series with the second storage resistor. The storage resistance is defined as R (Resistance), and the gate tube is defined as T (Transistor), so the resistance RAM has a 2T2R structure. In this embodiment, one end of the first storage resistor 11 is connected in series with the first gate tube 12, and the other...

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Abstract

The invention belongs to the technical field of resistive random access memories (RRAMs), in particular relating to an one time programmable (OTP) RRAM as well as a read-write circuit and programming method thereof; by using a symmetric 2T2R structure, the OTP RRAM can be used for judging a data storage state by comparing the currents flowing through two memistors R; and meanwhile, in combination with a characteristic that an OTP RRAM user only needs to program one time, the memistors R in the OTP RRAM are all placed in a high impedance state and consigned to the user for programming. The OTP RRAM has the characteristics of low power consumption, small area and power analysis attack resistance in programming, thereby being especially suitable for the embedded application.

Description

technical field [0001] The invention belongs to the technical field of resistive random access memory (Resistive Random Access Memory, RRAM), in particular to a 2T (Transistor, gate) 2R (Resistance, storage resistance) structure, which has the ability to resist power analysis attacks, A one-time programmable (On-Time Programmable, OTP) RRAM, a read-write circuit and an operation method of the OTP RRAM. Background technique [0002] Semiconductor memory stores information using a data combination of "0" or "1", and each memory device unit that makes up a large-capacity memory can store one data ("0" or "1"). Usually, the memory can be divided into volatile memory and non-volatile memory according to whether the data of the memory continues to be stored in the memory after power-off, and the data of the non-volatile memory can continue to be kept after power-off. [0003] Meanwhile, in the field of information security, the security and confidentiality of the information stor...

Claims

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Application Information

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IPC IPC(8): G11C16/02G11C16/10G11C16/26
Inventor 林殷茵金钢
Owner FUDAN UNIV
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