Processing method of sapphire substrate
A technology of sapphire substrate and processing method, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of free abrasive particles, long processing time, poor productivity, etc.
Active Publication Date: 2014-12-03
DISCO CORP
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Problems solved by technology
[0006] However, after the sapphire substrate is cut out from the sapphire ingot and subjected to grinding, polishing, etc. to form a uniform thickness, the surface of the sapphire substrate is finished to a surface roughness of 0.01 μm or less by chemical mechanical polishing (CMP). When it takes a long time to process, and there are free abrasive particles, chemical etching solution, and they need to be disposed of, so there is a problem of poor productivity
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[0025] Hereinafter, preferred embodiments of the processing method of the sapphire substrate of the present invention will be described in detail with reference to the drawings.
[0026] exist figure 1 A sapphire substrate 2 cut out from a sapphire boule is shown in . figure 1 The illustrated sapphire substrate 2 is formed to have a thickness of, for example, 600 μm. Undulations 20 are formed on the front surface 2 a and the back surface 2 b of the sapphire substrate 2 cut out from the sapphire ingot in this way. Such as figure 2 As shown, one surface of the sapphire substrate 2 formed in this way (the back surface 2b in the illustrated embodiment) is pasted on the substrate 3 with an unevenness-absorbing adhesive layer 30 coated on the surface of the substrate 3 with a uniform thickness. Bottom 3 (Protective member sticking process).
[0027] After the protective member pasting process is implemented, the first grinding process is carried out. In this first grinding proc...
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Abstract
The present invention provides a processing method of a sapphire substrate, which can efficiently perform fine processing to a surface roughness that is lower than 0.01 mu m. The method comprises the following steps: a first grinding step of keeping one surface side of the sapphire substrate on a chuck worktable of a grinding device, and grinding the other surface of the sapphire substrate for removing unsmoothness of the other surface of the sapphire substrate; a second grinding step of keeping the other surface of the sapphire substrate after the first grinding step to the chuck worktable of the grinding device, and grinding the former surface of the sapphire substrate for removing unsmoothness of the former surface of the sapphire substrate; and a surface grinding step of keeping the former surface or the other surface of the sapphire substrate after the second grinding step as a back surface for being kept on the chuck worktable of the grinding device, and performing fine processing for obtaining a surface roughness that is lower than 0.01 mu m through dry grinding for the surface of the sapphire substrate with a grinding pad which is obtained through fixing silicon oxide particles by rubber material.
Description
technical field [0001] The present invention relates to a processing method for processing a sapphire substrate that is a substrate on which an optical device layer is laminated. Background technique [0002] In the optical device manufacturing process, an optical device layer composed of an n-type nitride semiconductor layer and a p-type nitride semiconductor layer is stacked on the surface of a substantially disc-shaped sapphire substrate, and the optical device layer is divided by a plurality of grid-shaped partitions. The multiple regions formed form light-emitting diodes, laser diodes and other optical devices, thereby forming an optical device wafer. Next, by cutting the optical device wafer along the lanes, the region where the optical device is formed is divided to manufacture individual optical devices. (For example, refer to Patent Document 1.) [0003] After the sapphire substrate is cut out from the sapphire ingot (sapphire ingot), it is formed into a uniform t...
Claims
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IPC IPC(8): B24B1/00H01L33/00
Inventor 北野元己梅田桂男不破德人
Owner DISCO CORP