Preparation method of coaxial three-layer nano cable NiO@SnO2@TiO2

A nano-cable and coaxial electrospinning technology, which is applied in the manufacture of coaxial cables, spinning solution preparation, filament/wire forming, etc.

Inactive Publication Date: 2011-09-21
CHANGCHUN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, no coaxial electrospinning technology has been used to prepare NiO@SnO 2 @TiO 2 Related reports on coaxial three-layer nano-cable

Method used

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  • Preparation method of coaxial three-layer nano cable NiO@SnO2@TiO2
  • Preparation method of coaxial three-layer nano cable NiO@SnO2@TiO2
  • Preparation method of coaxial three-layer nano cable NiO@SnO2@TiO2

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Embodiment

[0020] Embodiment: nickel acetate tetrahydrate Ni(CH 3 COO) 2 4H 2 O and polyvinylpyrrolidone PVP (molecular weight: 90,000) were added to N, N-dimethylformamide DMF, magnetically stirred at room temperature for 6 hours, and left to stand for 3 hours to form a core spinning solution. The mass percent of each substance is: Ni(CH 3 COO) 2 4H 2 O is 7%, PVP is 11%, DMF is 82%; the SnCl 4 ·5H 2 O and PVP are added in DMF, magnetically stirred at room temperature for 6 hours, and left to stand for 3 hours to form the middle layer spinning solution, and the mass percentage of each substance in the middle layer spinning solution is: SnCl 4 ·5H 2 O is 8%, PVP is 11%, DMF is 81%; Butyl titanate Ti(OC 4 h 9 ) 4 , PVP and glacial acetic acid CH 3 Add COOH to absolute ethanol CH 3 CH 2 OH, magnetically stirred at room temperature for 6 hours, and left to stand for 3 hours to form a shell spinning solution. The mass percentage of each substance in the shell spinning solution i...

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Abstract

The invention relates to a preparation method of a coaxial three-layer nano cable NiO@SnO2@TiO2, belonging to the technical field of preparation of nano materials. The method comprises the following three steps: (1) preparation of spinning liquids: adding nickel acetate tetrahydrate and polyvinylpyrrolidone (PVP) into N,N-dimethylformamide (DMF) to form a core layer spinning liquid, adding tin tetrachloride pentahydrate and PVP into DMF to form a middle layer spinning liquid, and adding tetrabutyl titanate, PVP and glacial acetic acid into ethanol to form a shell layer spinning liquid; (2) preparation of [Ni(CH3COO)2+PVP]@[SnCl4+PVP]@[Ti(OC4H9)4+CH3COOH+PVP] precursor composite cable: by using a coaxial electrostatic spinning technology and a coaxial three-layer spinning jet, curing at the room temperature of 22-25 DEG C under the voltage of 18kV, wherein the curing distance is 15cm, and the relative humidity 40-50%; and (3) preparation of coaxial three-layer nano cable NiO@SnO2@TiO2:carrying out heat treatment on the precursor composite cable to obtain the NiO (core layer)@SnO2 (middle layer)@TiO2(shell layer) coaxial three-layer nano cable of which the diameter is 340-434 nm and the length is greater than 300 mu m: heating at a rate of 1 DEG C/min, keeping the temperature of 600 DEG C for 8 hours, cooling at a rate of 1 DEG C/min to 200 DEG C, and naturally cooling to room temperature.

Description

technical field [0001] The invention relates to the technical field of preparation of inorganic nanomaterials, in particular to a coaxial three-layer nano-cable NiO@SnO 2 @TiO 2 method of preparation. Background technique [0002] The preparation and properties of one-dimensional nanostructured materials are one of the frontier hotspots in the field of material science research. Nanocables (Nanocables) have attracted great attention in recent years because of their unique properties, rich scientific connotations, broad application prospects and important strategic positions in future nanostructure devices. The research on coaxial nano-cables started in the mid-1990s, and developed rapidly after 2000. So far, people have successfully prepared hundreds of coaxial nano-cables by using different synthesis methods and different types of materials, such as: Fe / C, Zn / ZnO, C / C, SiC / C, SiGaN / SiO x N y And the three-layer structure of Fe-C-BN and α-Si 3 N 4 -Si-SiO 2 Wait. I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): D01D5/00D01D5/34D01D1/02D01F8/18H01B13/016
Inventor 董相廷王进贤宋超于文生刘桂霞徐佳
Owner CHANGCHUN UNIV OF SCI & TECH
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