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Zinc-oxide-based polarity-controlled resistive random-access memory (RRAM) and manufacturing method thereof

A technology of resistive memory and zinc oxide, applied in electrical components and other directions, can solve the problem that the physical mechanism of the resistive switching mechanism is not completely clear.

Inactive Publication Date: 2011-09-21
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this stage, although RRAM still has many problems to be solved urgently, for example, there are many material systems, and it is not clear which material system has the best storage performance; further reducing power consumption is still the focus of the next-generation non-volatile memory; The specific physical mechanism of the mechanism is not completely clear, there are conductive filament model, space charge limited current model, charge capture and release of defect level, Schottky model, Poole-Frank model, etc.

Method used

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  • Zinc-oxide-based polarity-controlled resistive random-access memory (RRAM) and manufacturing method thereof
  • Zinc-oxide-based polarity-controlled resistive random-access memory (RRAM) and manufacturing method thereof
  • Zinc-oxide-based polarity-controlled resistive random-access memory (RRAM) and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0034] A ZnO-based polarity controllable resistive variable memory made of SiO 2 / Si substrate, adhesion layer, lower electrode, zinc oxide film with resistance switching characteristics, upper electrode and protective layer, such as figure 1 As shown, the specific preparation process is as follows:

[0035] 1) On SiO by ion beam sputtering 2 Prepare the adhesion layer Ti film on the Si substrate, the thickness of the Ti film is 5nm;

[0036] 2) Prepare the lower electrode Cu on the adhesion layer by DC magnetron sputtering method, the background vacuum degree: 1×10 -4 Pa, substrate temperature: room temperature, working pressure: 1.5Pa, Ar=30sccm, sputtering power: 85W; film thickness 20nm;

[0037] 3) Prepare a zinc oxide film with resistive switching properties on the lower electrode by radio frequency magnetron sputtering, the background vacuum degree: 1×10 -4 Pa, substrate temperature: 250°C, working pressure: 1.0Pa, O in sputtering 2 =8sccm, Ar=32sccm, sputtering po...

Embodiment 2

[0042] A ZnO-based polarity controllable resistive variable memory made of SiO 2 / Si substrate, adhesion layer, lower electrode, zinc oxide film with resistance transition characteristics, upper electrode and protective layer, the specific preparation process is as follows:

[0043] 1) Prepare an adhesion layer Ti film on a SiO2 / Si substrate by ion beam sputtering, the thickness of the Ti film is 5nm;

[0044] 2) Prepare the lower electrode Cu on the Ti film by DC magnetron sputtering method, the background vacuum degree: 1×10 -4 Pa, substrate temperature: room temperature, working pressure: 1.5Pa, Ar=30sccm, sputtering power: 85W; film thickness 20nm;

[0045] 3) Prepare a zinc oxide film with resistive switching properties on the lower electrode by radio frequency magnetron sputtering, the background vacuum degree: 1×10 -4 Pa, substrate temperature: 250°C, working pressure: 1.0Pa, O in sputtering 2 =8sccm, Ar=32sccm, sputtering power: 100W; film thickness 100nm;

[0046]...

Embodiment 3

[0050] A ZnO-based polarity controllable resistive variable memory made of SiO 2 / Si substrate, adhesion layer, lower electrode, zinc oxide film with resistance transition characteristics, upper electrode and protective layer, the specific preparation process is as follows:

[0051] 1) Prepare an adhesion layer Ti film on a SiO2 / Si substrate by ion beam sputtering, the thickness of the Ti film is 5nm;

[0052] 2) Prepare the lower electrode Cu on the adhesion layer by DC magnetron sputtering method, the background vacuum degree: 1×10 -4 Pa, substrate temperature: room temperature, working pressure: 1.5Pa, Ar=30sccm, sputtering power: 85W; film thickness 20nm;

[0053] 3) A zinc oxide film was prepared on the lower electrode by radio frequency sputtering, the oxygen partial pressure in sputtering was 25%, the sputtering power was 250W, and the film thickness was 100nm;

[0054] 4) The upper electrode Ag is prepared on the zinc oxide film by DC magnetron sputtering method, and...

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Abstract

The invention discloses a zinc-oxide-based polarity-controlled resistive random-access memory (RRAM) based on which is composed of a SiO2 / Si substrate, an adhesive layer, a lower electrode, a zinc oxide thin film with a resistance conversion characteristic, an upper electrode and a protective layer, wherein, the thickness of the adhesive layer is 5-20nm, the thickness of the lower electrode is 5-100nm, the thickness of the zinc oxide thin film with characteristics of conversion is 5-200nm, the thickness of the upper electrode is 5-100nm, and the thickness of the protective layer is 5-100nm. The polarity-controlled RRAM provided by the invention has the advantages that the influence of the characteristics of resistance conversion based on a zinc oxide thin film resistance changing device is shown into unipolarity, bipolarity and nonpolarity through depositing different upper electrode materials; according to the characteristics of different polarity resistance changing properties, the application prospects of the RRAM can be expanded, the importance of academics and practical application of the RRAM is highlighted; and a polarity-controlled resistance changing device can be prepared through preparing different upper electrodes of the resistance changing device, thus the RRAM has great significance in the aspects of mass production and actual promotion of the RRAM production process.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a preparation method of a zinc oxide-based polarity controllable resistive memory. Background technique [0002] The mainstream memory in modern society adopts flash memory (flash) memory based on floating gate structure. Due to the continuous shrinking of integration and device size, the influence of crosstalk of the floating gate structure itself has almost reached the size limit. When the time is small, the leakage of charge becomes more and more serious (gate dielectric leakage); and in view of the contradiction between erasing and writing speed and reliability, as well as its high operating voltage, complex circuit structure and other limitations, especially when the process node After entering below 32nm, it is impossible to further increase the integration density in flash memory, making the new generation of non-volatile memory more and more attractive to people, a...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 张楷亮宋凯王芳刘凯苗银萍
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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