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Modification method for polyvinylidene fluoride (PVDF) film

A polyvinylidene fluoride and polyvinylidene fluoride resin technology is applied in the field of modification of polyvinylidene fluoride films, and can solve the problems of poor crystallinity of polyvinylidene fluoride films and the like

Active Publication Date: 2012-09-26
JIANGSU TIANCHENG BIOCHEM PROD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to overcome the deficiency of the poor crystallinity of the polyvinylidene fluoride film obtained by the existing method of modifying the polyvinylidene fluoride film by ultraviolet radiation, the present invention provides a method for modifying the polyvinylidene fluoride film, the method Adopt 173nm UVb lamp, adjust the voltage to 3-9KV, and control the irradiance of ultraviolet light source at 20-80mw / cm 2 In the range of irradiation for 5-15 minutes, the crystallinity of PVDF film can be improved

Method used

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  • Modification method for polyvinylidene fluoride (PVDF) film
  • Modification method for polyvinylidene fluoride (PVDF) film
  • Modification method for polyvinylidene fluoride (PVDF) film

Examples

Experimental program
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Effect test

Embodiment 1

[0014] Example 1, 0.5 g of polyvinylidene fluoride resin powder was dissolved in 5 ml of polar solution N,N-dimethylformamide, and ultrasonically treated at 30° C. for 60 min. After the solution is prepared, it is degassed in a vacuum of 0.5 Pa to increase the density of the polyvinylidene fluoride film. Drop the prepared polyvinylidene fluoride solution on a clean silicon wafer, and place it on a horizontal platform, so that the solution is cast into a film to the edge of the silicon wafer under the action of tension. After the polyvinylidene fluoride film was melted at 200°C for 30 minutes, it was quickly put into an ice-water mixture at 0°C for quenching, and then annealed at 120°C to obtain a polyvinylidene fluoride film. Place the polyvinylidene fluoride film horizontally facing the light-emitting surface of the radiation source, adjust the voltage to 3KV, and control the irradiance of the ultraviolet light source to 20mv / cm 2 . The irradiation time was 15 minutes, and ...

Embodiment 2

[0015] Example 2, 0.5 g of polyvinylidene fluoride resin powder was dissolved in 5 ml of polar solution N,N-dimethylformamide, and ultrasonically treated at 35° C. for 50 min. After the solution is prepared, it is degassed in a vacuum of 0.3 Pa to increase the density of the polyvinylidene fluoride film. Drop the prepared polyvinylidene fluoride solution on a clean silicon wafer, and place it on a horizontal platform, so that the solution is cast into a film to the edge of the silicon wafer under the action of tension. After the polyvinylidene fluoride film was melted at 230°C for 25 minutes, it was quickly put into an ice-water mixture at 0°C for quenching, and then annealed at 150°C to obtain a polyvinylidene fluoride film. Place the polyvinylidene fluoride film facing the light-emitting surface of the radiation source horizontally, adjust the voltage to 5KV, and control the irradiance of the ultraviolet light source to 30mv / cm 2 . The irradiation time was 13 minutes, and ...

Embodiment 3

[0016] Example 3, 1.0 g of polyvinylidene fluoride resin powder was dissolved in 5 ml of polar solution N,N-dimethylformamide, and ultrasonically treated at 40° C. for 30 min. After the solution is prepared, it is degassed in a vacuum of 0.3 Pa to increase the density of the polyvinylidene fluoride film. Drop the prepared polyvinylidene fluoride solution on a clean silicon wafer, and place it on a horizontal platform, so that the solution is cast into a film to the edge of the silicon wafer under the action of tension. After the polyvinylidene fluoride film was melted at 250°C for 20 minutes, it was quickly put into an ice-water mixture at 0°C for quenching, and then annealed at 200°C to obtain a polyvinylidene fluoride film. Place the polyvinylidene fluoride film facing the light-emitting surface of the radiation source horizontally, adjust the voltage to 6KV, and control the irradiance of the ultraviolet light source at 40mv / cm 2 , the irradiation time is 10min, and finally...

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Abstract

The invention discloses a modification method for a PVDF film, which enables the technical problem that the UV irradiation modified PVDF film prepared by the prior art has poor crystallinity to be solved. The technical scheme in the invention is as follows: a UVb lamp with a wavelength of 173 nm is employed, voltage is adjusted to 3 to 9 KV, UV light source irradiance is controlled to be in a range from 20 to 80 mv / cm<2>, irradiation lasts for 5 to 15 min, and therefore a PVDF film modified by ultraviolet light can be obtained. According to the invention, since the UVb lamp with a wavelength of 173 nm is employed, the irradiation intensity is 40 mv / cm<2>, and the irradiation lasts for 10 or 15 min, the PVDF film with a larger grain size and better crystallinity is obtained.

Description

technical field [0001] The invention relates to a method for modifying a film, in particular to a method for modifying a polyvinylidene fluoride film. Background technique [0002] The document "Katan, M.Narjis, A.Siegmann.The Effect of Some Fluoropolymers'Structures on Their Response to UV Irradiation.Journal of Applied Polymer Science.1998,70(8):1471~1481" discloses a UV radiation The basic process of polyvinylidene fluoride film modification method is: under the condition of 50 ℃, irradiate with 313-550nm UVb lamp for 2400h, and measure a sample index every 200h. However, this modification method has obvious deficiencies, and the radiation intensity of the ultraviolet lamp is too low, only 1-5mw / cm 2 , and the shortest wavelength is only 313mm. Therefore, the crystallinity of polyvinylidene fluoride film (hereinafter referred to as PVDF film) is not ideal. When the irradiation time is as long as 200h-2400h, the crystallinity is only 28.12%-40.10%, which is difficult to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08J5/18C08J3/28C08L27/16
Inventor 樊慧庆惠迎雪
Owner JIANGSU TIANCHENG BIOCHEM PROD