Modification method for polyvinylidene fluoride (PVDF) film
A polyvinylidene fluoride and polyvinylidene fluoride resin technology is applied in the field of modification of polyvinylidene fluoride films, and can solve the problems of poor crystallinity of polyvinylidene fluoride films and the like
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Embodiment 1
[0014] Example 1, 0.5 g of polyvinylidene fluoride resin powder was dissolved in 5 ml of polar solution N,N-dimethylformamide, and ultrasonically treated at 30° C. for 60 min. After the solution is prepared, it is degassed in a vacuum of 0.5 Pa to increase the density of the polyvinylidene fluoride film. Drop the prepared polyvinylidene fluoride solution on a clean silicon wafer, and place it on a horizontal platform, so that the solution is cast into a film to the edge of the silicon wafer under the action of tension. After the polyvinylidene fluoride film was melted at 200°C for 30 minutes, it was quickly put into an ice-water mixture at 0°C for quenching, and then annealed at 120°C to obtain a polyvinylidene fluoride film. Place the polyvinylidene fluoride film horizontally facing the light-emitting surface of the radiation source, adjust the voltage to 3KV, and control the irradiance of the ultraviolet light source to 20mv / cm 2 . The irradiation time was 15 minutes, and ...
Embodiment 2
[0015] Example 2, 0.5 g of polyvinylidene fluoride resin powder was dissolved in 5 ml of polar solution N,N-dimethylformamide, and ultrasonically treated at 35° C. for 50 min. After the solution is prepared, it is degassed in a vacuum of 0.3 Pa to increase the density of the polyvinylidene fluoride film. Drop the prepared polyvinylidene fluoride solution on a clean silicon wafer, and place it on a horizontal platform, so that the solution is cast into a film to the edge of the silicon wafer under the action of tension. After the polyvinylidene fluoride film was melted at 230°C for 25 minutes, it was quickly put into an ice-water mixture at 0°C for quenching, and then annealed at 150°C to obtain a polyvinylidene fluoride film. Place the polyvinylidene fluoride film facing the light-emitting surface of the radiation source horizontally, adjust the voltage to 5KV, and control the irradiance of the ultraviolet light source to 30mv / cm 2 . The irradiation time was 13 minutes, and ...
Embodiment 3
[0016] Example 3, 1.0 g of polyvinylidene fluoride resin powder was dissolved in 5 ml of polar solution N,N-dimethylformamide, and ultrasonically treated at 40° C. for 30 min. After the solution is prepared, it is degassed in a vacuum of 0.3 Pa to increase the density of the polyvinylidene fluoride film. Drop the prepared polyvinylidene fluoride solution on a clean silicon wafer, and place it on a horizontal platform, so that the solution is cast into a film to the edge of the silicon wafer under the action of tension. After the polyvinylidene fluoride film was melted at 250°C for 20 minutes, it was quickly put into an ice-water mixture at 0°C for quenching, and then annealed at 200°C to obtain a polyvinylidene fluoride film. Place the polyvinylidene fluoride film facing the light-emitting surface of the radiation source horizontally, adjust the voltage to 6KV, and control the irradiance of the ultraviolet light source at 40mv / cm 2 , the irradiation time is 10min, and finally...
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Abstract
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