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Sputtering target for forming thin film transistor wiring film

A technology of thin film transistors and sputtering targets, which is applied in the field of sputtering targets, can solve problems such as reduced adhesion and reduced adhesion characteristics, and achieve the effects of improved adhesion, excellent adhesion, and small deviations

Inactive Publication Date: 2011-09-28
MITSUBISHI MATERIALS CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, there is a problem that the adhesion achieved by the oxide layer and the property of preventing Si from diffusing into the copper alloy wiring film are degraded, and in particular, the adhesion is significantly degraded.

Method used

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  • Sputtering target for forming thin film transistor wiring film
  • Sputtering target for forming thin film transistor wiring film
  • Sputtering target for forming thin film transistor wiring film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0056] An oxygen-free copper with a purity of 99.99% by mass was prepared, and the oxygen-free copper was melted at high frequency in a high-purity graphite crucible in an Ar atmosphere. Mg and Ca are added to the obtained melt, and at least one of Mn and Al is added as necessary, and P is further added as necessary and melted, and the composition is adjusted so that it has the composition shown in Tables 1 to 3 Composition of the melt.

[0057] The obtained melt was cast in a cooled carbon mold, and then hot rolled. Then, finally, stress relief annealing is performed to obtain a rolled body.

[0058] The surface of the obtained rolled body was lathe processed to prepare a disc-shaped copper alloy sputtering target material of the present invention example having dimensions of outer diameter: 200 mm × thickness: 10 mm and having the composition shown in Tables 1 to 3 (below Referred to as the target of the present invention) 1 to 30, the copper alloy sputtering target of the comp...

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Abstract

Provided is a sputtering target for forming a thin film transistor wiring film. The sputtering target contains 0.1 to 5 atomic % of Mg, 0.1 to 10 atomic % of Ca, and Cu and inevitable impurities as the remaining part. Moreover, the sputtering target may contain a total of 0.1 to 10 atomic % of Mn or / and Al. Furthermore, the sputtering target may contain 0.001 to 0.1 atomic % of P.

Description

Technical field [0001] The present invention relates to a sputtering target for forming a wiring film such as a gate electrode, a source electrode, and a drain electrode of a thin film transistor (hereinafter referred to as TFT) having excellent adhesion, and a wiring base film (hereinafter referred to as a wiring film). [0002] This application claims priority based on Japanese Patent Application No. 2008-273938 filed in Japan on October 24, 2008, and the content is used here. Background technique [0003] Generally, flat panel displays such as liquid crystal displays and organic EL displays have a structure in which thin film transistors (hereinafter referred to as TFTs) are formed on a glass substrate, and copper is used as the wiring film for the gate electrode, source electrode, and drain electrode of the TFT. Alloy wiring film. [0004] For example, a known liquid crystal display device is formed with a copper alloy wiring film containing Mg: 1 to 5 atomic %, and the remainde...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/285C22C9/01C22C9/05H01L29/786C22C9/00H01L21/28C23C14/34H01L21/3205H01L23/52
CPCH01L21/2855C23C14/165C22C9/00H01L29/4908H01L29/458H01L23/53233C23C14/3414H01L21/32051H01L2924/0002H01L27/124H01L2924/00H01L21/285C23C14/34H01L21/28
Inventor 牧一诚小出正登森晓谷口兼一中里洋介
Owner MITSUBISHI MATERIALS CORP