Nonvolatile charge capture type storage device, preparation method thereof and application

Abstract

The invention relates to a nonvolatile charge capture type storage device, a preparation method thereof and application. The preparation method is characterized by simple operation and easy control. The nanometer microcrystalline as a storage medium has a uniform distribution in the storage device obtained. The preparation method of the nonvolatile charge capture type storage device comprises thefollowing steps: a) forming a tunneling layer on the substrate surface; 2) forming a uniform (ZrO2) x (M) 1- x film as an accumulation layer on the tunneling layer, wherein x is larger than 0.5 and less than 1 and the M is SiO2 or Al2O3; c) forming a barrier layer on the accumulation layer; d) annealing the sample prepared and precipitating the ZrO2 nanometer microcrystalline from the accumulation layer to be the storage medium. According to the invention, a means of high temperature annealing processing is used to precipitate the ZrO2 nanometer microcrystalline from the accumulation layer parent phase, thereby realizing an effect of nanometer microcrystalline storage. According to the method, the nanometer microcrystalline obtained as the storage medium has a uniform distribution in the amorphous parent phase.

Description

technical field

[0001] The invention relates to a nonvolatile charge trapping memory device, its preparation method and application. Background technique

[0002] For decades, the development of integrated circuits has basically followed the Moore's Law predicted by Dr. Gordon E. Moore, one of the founders of Intel Corporation, in 1964: 12 to 18 months doubles, feature size shrinks times. As the feature size of devices becomes smaller and smaller, traditional floating-gate non-volatile semiconductor memory devices face serious leakage problems. The size of the tunneling layer in the floating gate memory device is continuously reduced, so that a single defect will cause all the charges stored in the polysilicon floating gate to be lost. To solve this difficult problem, polysilicon-oxide-nitride-oxide-silicon (SONOS) type semiconductor memory devices have been extensively studied. In such devices, electrons are captured by the Si 3 N 4 A discrete trap capture in the sto...

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