The invention relates to a preparation method of an
indium antimonide nanocrystal, belonging to the technical field of a composite
nanocrystal material. The product of the preparation method is the
indium antimonide nanocrystal. The preparation method of the
indium antimonide nanocrystal comprises steps of: mixing Sb2O3, In(NO3)3.9 / 2H2O, PEG200 (
polyethylene glycol) with ethanediol in a 250ml three-necked flask, wherein the mixture is taken as growth solution; dissolving NaBH4 into ethidene
diamine to be taken as storage solution; performing the
oil bath on the growth solution until the temperature of the solution is 140 DEG C under the protective
atmosphere of the
nitrogen, and keeping the magnetic stirring for 30 minutes; adjusting the
oil bath temperature at
reaction temperature (120 DEG C-180 DEG C); fast injecting the storage solution into the growth solution (-2S) by a needle cylinder, and keeping the
oil bath temperature and the magnetic stirring; sampling reaction solution within the reaction time from 5 minutes to 5 hours; and adding the
alcohol with proper amount into the sampled reaction solution, and centrifuging for 20 minutes at the rotation speed of 15000rpm to separate the product (InSb). The preparation method is a
liquid phase preparation method for preparing the InSb nanocrystal at a lower temperature (120-180 DEG C), wherein the method is high-efficiency, low-priced, free of catalytic agent and relatively safe; the prepared product is stable in property, and even in particle; and the preparation method can be used for providing the
indium antimonide nanocrystal which is suitable for a high-speed
electronic component, a magnetic component, and a
far infrared-waveband photoelectric component.