Preparation method of indium antimonide nanocrystal

Abstract

The invention relates to a preparation method of an indium antimonide nanocrystal, belonging to the technical field of a composite nanocrystal material. The product of the preparation method is the indium antimonide nanocrystal. The preparation method of the indium antimonide nanocrystal comprises steps of: mixing Sb2O3, In(NO3)3.9 / 2H2O, PEG200 (polyethylene glycol) with ethanediol in a 250ml three-necked flask, wherein the mixture is taken as growth solution; dissolving NaBH4 into ethidene diamine to be taken as storage solution; performing the oil bath on the growth solution until the temperature of the solution is 140 DEG C under the protective atmosphere of the nitrogen, and keeping the magnetic stirring for 30 minutes; adjusting the oil bath temperature at reaction temperature (120 DEG C-180 DEG C); fast injecting the storage solution into the growth solution (-2S) by a needle cylinder, and keeping the oil bath temperature and the magnetic stirring; sampling reaction solution within the reaction time from 5 minutes to 5 hours; and adding the alcohol with proper amount into the sampled reaction solution, and centrifuging for 20 minutes at the rotation speed of 15000rpm to separate the product (InSb). The preparation method is a liquid phase preparation method for preparing the InSb nanocrystal at a lower temperature (120-180 DEG C), wherein the method is high-efficiency, low-priced, free of catalytic agent and relatively safe; the prepared product is stable in property, and even in particle; and the preparation method can be used for providing the indium antimonide nanocrystal which is suitable for a high-speed electronic component, a magnetic component, and a far infrared-waveband photoelectric component.

Description

[0001] technical field [0002] The invention relates to a method for preparing indium antimonide nanocrystals, belonging to the technical field of preparation of III-V group nanocrystal materials. Background technique [0003] InSb is the semiconductor material with the narrowest band gap and the highest carrier mobility among III-V semiconductors. It has been well applied in infrared detection. However, due to its nanoscale quantum dots, wells and low-dimensional semiconductor quantum systems It exhibits many special physical properties such as light, electricity and magnetism, and has great application prospects in the fields of ultra-high-density magnetic heads, medical imaging, and short-distance communication. In today's semiconductor industry, reducing product power consumption is an important part of development, and using new materials to replace old materials is an important breakthrough - and InSb can supplement the shortage of silicon elements, while reducing c...

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Problems solved by technology

For example, all three of them require higher reaction temperatures (organometallic vapor phase epitaxy: 400-700°C; laser-assisted catalytic growth: ~800°C; liquid-phase method: 240-360°C); Harsh conditions (SbH 3 , Sb[Si(CH 3 )] 3 or Sb[N(CH 3 ) 2 ] 3 ); most require the use of nanocatalyst particles, which often remain in the product or at the ends of InSb nanocrystals; the process is uncontrollable in terms of material structure and morphology

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