Method for surface modification of ZnSe:Ag quantum dots

A technology of surface modification and quantum dots, which is applied in the direction of chemical instruments and methods, luminescent materials, etc., can solve the problems of surface defects, reduce the fluorescence efficiency of quantum dots, and high activity, and achieve the effect of less agglomeration, simple experimental operation, and good stability
CN103992797AInactive Publication Date: 2014-08-20SHANGHAI UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI UNIV
Publication Date
2014-08-20
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a method for surface modification of ZnSe:Ag quantum dots, and belongs to the technical field of composite nano microcrystalline materials. A preparation method comprises the steps: based on the preapred ZnSe:Ag quantum dots, thiourea and ZnTe are adopted for modifying the surface of the quantum dots. The modification process is carried out in a water phase, and the reaction temperature is 100 DEG C. Thiourea is used for direct surface modification to form ZnSe:Ag / ZnS quantum dots; ZnTe modification adopts a prepared Te source, that is to say, sodium borohydride (NaBH4) and a Te powder are utilized to undergo a reaction to prepare sodium hydrogen telluride (NaHTe), then NaHTe is injected into the prepared ZnSe:Ag quantum dots, and a reaction of the two components is carried out to generate a ZnSe:Ag / ZnTe quantum dot solution. The obtained product is uniform in dispersion, good in stability, and little in aggregation, and can be applied to the fields of biological fluorescent labeling, drug separation and some optoelectronic devices.
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Description

technical field

[0001] The invention relates to a surface modification method of ZnSe:Ag quantum dots, which belongs to the technical field of composite nanocrystal materials. Background technique

[0002] ZnSe is an important direct bandgap Ⅱ-Ⅵ group semiconductor luminescent material. It is a sphalerite structure and a face-centered cubic crystal with a wide bandgap (2.8eV) and a large binding energy (21meV). At room temperature, the band gap directly transitions to a luminescent wavelength in the range of blue-violet light. It has good transmission performance for light with a wavelength range of 0.5-22 μm, basically covers the visible-infrared range, and has low material toxicity. It is suitable for optoelectronic devices, biological detection, marking and imaging and other fields. At present, the luminous intensity of ZnSe quantum dots is low, which greatly limits the related applications. Doping with transition elements can effectively improve its luminescent propert...

Claims

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