Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metallic wiring etching solution and metallic wiring forming method using the etching solution

A technology of metal wiring and etching solution, which is applied in the direction of chemical instruments and methods, luminescent materials, etc., can solve the problems of high price, stability, and change, and achieve the effects of reducing costs, ensuring process redundancy, and maintaining performance

Inactive Publication Date: 2011-11-09
DONGJIN SEMICHEM CO LTD
View PDF9 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Hydrogen peroxide etchant is used to etch such a multilayer film, but since hydrogen peroxide etchant accelerates the decomposition of hydrogen peroxide when the concentration of metal ions exceeds a certain level, it is quickly decomposed into water and oxygen, and heat may be generated. and sharp composition changes, so there are problems in stability
In order to solve the above-mentioned problems of hydrogen peroxide, a method of adding a hydrogen peroxide stabilizer was adopted, but it became a cause of cost increase because of its high price

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metallic wiring etching solution and metallic wiring forming method using the etching solution
  • Metallic wiring etching solution and metallic wiring forming method using the etching solution
  • Metallic wiring etching solution and metallic wiring forming method using the etching solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0053] The metal wiring etching solution of the embodiment of the present invention comprises: ammonium persulfate, 0.1%-30% by weight of organic acid, 0.01%-5% by weight of phosphate, and azole compounds. In this etching solution, an organic acid was used instead of an inorganic acid, and a phosphate was added to the metal wiring etching solution of the comparative example.

[0054] After forming a double layer of a titanium film and a copper film on a substrate and forming a photoresist pattern on the double layer, the double layer was etched using the etching solution. At this time, the processes are implemented respectively according to the substrate size (23 "and 40"). When the substrate size is 23 ", the thicknesses of the titanium film and the copper film are respectively formed as 300" 2000 When the substrate size is 40 ", the thickness of titanium film and copper film are respectively formed as 300 3000 The double layer is etched after being formed as source an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a metallic wiring etching solution, containing ammonium persulfate, 0.1-30% weight ratio of organic acid, 0.01-5% weight ratio of phosphate and azole compounds.

Description

technical field [0001] The present invention relates to a metal wiring etching liquid and a metal wiring forming method using the metal wiring etching liquid. Background technique [0002] In general, a thin film transistor (TFT) display panel is used as a circuit board for independently driving pixels in a liquid crystal display device, an organic electroluminescent display device, or the like. On the thin film transistor display panel, gate wiring for transmitting scan signals and data wiring for transmitting image signals are formed; the thin film transistor display panel includes a thin film transistor and a pixel electrode, and the thin film transistor is connected to the gate wiring and the data wiring, The pixel electrode is connected to the thin film transistor. [0003] A thin film transistor includes: a gate electrode which is a part of gate wiring; a semiconductor layer for forming a channel; a source which is a part of data wiring; and a drain. The thin film tr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23F1/16C23F1/18C23F1/26
CPCC09K11/06C23F1/18C23F1/26C23F1/44
Inventor 郑钟铉洪瑄英徐南锡朴弘植宋溱镐金俸均李旺宇李骐范曹三永金图元金相佑申贤哲徐源国
Owner DONGJIN SEMICHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com