Metallic wiring etching solution and metallic wiring forming method using the etching solution

A technology of metal wiring and etching solution, which is applied in the direction of chemical instruments and methods, luminescent materials, etc., can solve the problems of high price, stability, and change, and achieve the effects of reducing costs, ensuring process redundancy, and maintaining performance

Inactive Publication Date: 2011-11-09
DONGJIN SEMICHEM CO LTD
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  • Abstract
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Problems solved by technology

[0007] Hydrogen peroxide etchant is used to etch such a multilayer film, but since hydrogen peroxide etchant accelerates the decomposition of hydrogen peroxide when the concentration of metal ions exceeds a certain level, it is quickly decomposed into water and oxygen, and heat

Method used

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  • Metallic wiring etching solution and metallic wiring forming method using the etching solution
  • Metallic wiring etching solution and metallic wiring forming method using the etching solution
  • Metallic wiring etching solution and metallic wiring forming method using the etching solution

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[0052] Example

[0053] The metal wiring etching solution of the embodiment of the present invention includes: ammonium persulfate, 0.1% to 30% by weight of organic acid, 0.01% to 5% by weight of phosphate, and azole compounds. In this etching solution, in the metal wiring etching solution of the comparative example, an organic acid was substituted for an inorganic acid, and a phosphate was added.

[0054] After forming a double layer of a titanium film and a copper film on a substrate, and forming a photoresist pattern on the double layer, the double layer is etched using the etching solution. At this time, the process is performed according to the substrate size (23" and 40"). When the substrate size is 23", the thickness of the titanium film and the copper film are respectively formed to 300 2000 When the substrate size is 40", the thickness of the titanium film and the copper film are respectively formed to 300 3000 The double layer is etched after the source and drain are ...

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Abstract

The invention provides a metallic wiring etching solution, containing ammonium persulfate, 0.1-30% weight ratio of organic acid, 0.01-5% weight ratio of phosphate and azole compounds.

Description

technical field [0001] The present invention relates to a metal wiring etching liquid and a metal wiring forming method using the metal wiring etching liquid. Background technique [0002] In general, a thin film transistor (TFT) display panel is used as a circuit board for independently driving pixels in a liquid crystal display device, an organic electroluminescent display device, or the like. On the thin film transistor display panel, gate wiring for transmitting scan signals and data wiring for transmitting image signals are formed; the thin film transistor display panel includes a thin film transistor and a pixel electrode, and the thin film transistor is connected to the gate wiring and the data wiring, The pixel electrode is connected to the thin film transistor. [0003] A thin film transistor includes: a gate electrode which is a part of gate wiring; a semiconductor layer for forming a channel; a source which is a part of data wiring; and a drain. The thin film tr...

Claims

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Application Information

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IPC IPC(8): C23F1/16C23F1/18C23F1/26
CPCC09K11/06C23F1/18C23F1/26C23F1/44
Inventor 郑钟铉洪瑄英徐南锡朴弘植宋溱镐金俸均李旺宇李骐范曹三永金图元金相佑申贤哲徐源国
Owner DONGJIN SEMICHEM CO LTD
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