Method for integrating manganese-oxide-based resistive memory with copper interconnection rear end process
A manganese oxide-based, back-end process technology, which is applied in the field of resistive memory and copper interconnection back-end process integration, can solve the problems of not being able to replace Flash, increase the aspect ratio, and large leakage current, so as to reduce the manufacturing cost and low cost , Reduce power consumption, improve yield and reliability
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[0043] The invention is described more fully hereinafter in reference to the examples illustrated in the illustrations, providing preferred embodiments but should not be considered limited to the embodiments set forth herein. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, but as schematic diagrams, they should not be considered as strictly reflecting the proportional relationship of geometric dimensions.
[0044] The drawings referenced herein are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be considered limited to the particular shapes of the regions shown in the drawings, but include resulting shapes, such as manufacturing-induced deviation. For example, the curves obtained by dry etching usually have curved or rounded characteristics, but in the illustrations of the embodiments of the present invention, they are all represented by rectangles, and the repre...
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