Method for integrating manganese-oxide-based resistive memory with copper interconnection rear end process

Abstract

The invention belongs to the technical field of semiconductor memories and particularly relates to a method for integrating a manganese-oxide-based resistive memory with a copper interconnection rear end process. In the method for process integration, manganese metal in a cap layer on a copper lead wire is siliconized to form a MnSi compound layer and the MnSi compound layer is oxidized to form aMnSi(x)O(y) storage medium layer; and a manganese silica compound layer is used as a barrier layer of the copper lead wire at a copper interconnection rear end. The method has the advantages of compatibility with the copper interconnection rear end process with process nodes equal to or less than 45 nanometers; and the manganese-oxide-based resistive memory has low preparation cost, high reliability and low power consumption.

Description

technical field [0001] The invention belongs to the technical field of semiconductor memory, in particular to a resistive memory (Resistive Memory) based on a MnSixOy storage medium layer (0.001<x≤2, 2<y≤5), in particular to a resistive memory based on a MnSixOy storage medium layer and copper A method for interconnect back-end process integration. Background technique [0002] Memory occupies an important position in the semiconductor market. Due to the continuous popularization of portable electronic devices, the share of non-volatile memory in the entire memory market is also increasing, and more than 90% of the share is occupied by FLASH (flash memory). However, due to the requirement of storing charges, the floating gate of FLASH cannot be thinned without limit with the development of technology generation. It is reported that the limit of FLASH technology is around 32nm, which forces people to look for the next generation of non-volatile memory with better perfor...

AI Technical Summary

Problems solved by technology

Due to the limitation of grain size of Cu, W and other materials, when the corresponding oxides are used as storage media, the leakage current will be large, thereby increasing power consumption, and cannot effectively replace Flash at the 45nm and 32nm stages

And at the 45nm and 32nm process nodes, the thickness of the barrier layer is required to be reduced to 4.9nm and 3.6nm respectively, and the aspect ratio is further increased. Traditional Ti / TiN, Ta / TaN, etc. cannot meet the requirements. Therefore, titanium oxide The application of storage media such as tantalum oxide and tantalum oxide in the back end of copper interconnection will also be limited by the process

Images