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Thin film transistor and manufacturing method thereof

A technology of thin film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of high cost and long manufacturing time

Inactive Publication Date: 2013-02-13
HUAYING OPTOELECTRONICS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the manufacturing method of a thin film transistor including a pixel electrode generally requires at least four photomasks to complete
The higher the number of masks used, the higher the cost and the longer the manufacturing time required

Method used

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  • Thin film transistor and manufacturing method thereof
  • Thin film transistor and manufacturing method thereof
  • Thin film transistor and manufacturing method thereof

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Embodiment Construction

[0021] Please refer to Figures 1A-1H , which shows a schematic cross-sectional structure diagram of a manufacturing process of a thin film transistor according to an embodiment of the present invention. exist Figures 1A-1D , is a schematic cross-sectional structure diagram of the manufacturing process using the first gray scale mask. exist Figures 1E-1H , is a schematic cross-sectional structure diagram of the manufacturing process using the second gray scale mask and the lift-off method.

[0022] like Figure 1A As shown, a transparent conductive layer 110 , a channel layer 120 , an Ohmic contact layer 122 and a first conductive layer 130 are sequentially formed on a substrate 100 first. Then, a first gray scale mask is used to form a patterned first photoresist layer 142 on the pixel area. The material of the transparent conductive layer 110 can be any transparent conductive material, such as indium tin oxide. Materials of the channel layer 120 and the Ohmic contact ...

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Abstract

The invention provides a thin film transistor and a manufacturing method thereof. Among them, the top-gate thin film transistor is produced by two grayscale photomask processes and a lift-off method. Therefore, compared with the traditional thin film transistor manufacturing process, this method can save the cost of photomask and manufacturing process.

Description

technical field [0001] The present invention relates to a thin film transistor and a manufacturing method thereof, and in particular to a thin film transistor applied to a liquid crystal display and a manufacturing method thereof. Background technique [0002] A liquid crystal display mainly includes components such as a thin film transistor, a color filter, and a liquid crystal, wherein the thin film transistor is mainly composed of a gate, a gate dielectric layer, a source and a drain. According to the position of the gate, it can be divided into top gate type or bottom gate type. In addition, a transparent pixel electrode is connected to the drain, and its switch is controlled by a thin film transistor. [0003] However, the manufacturing method of the thin film transistor including the pixel electrode generally requires at least four photomasks to complete. The more masks used, the higher the cost and the longer the required manufacturing time. Contents of the invent...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/786
Inventor 廖展章邱羡坤言维邦徐朝焕
Owner HUAYING OPTOELECTRONICS