Preparation method of Cu-Zn-Sn-S thin film

A copper-zinc-tin-sulfur and thin-film technology is applied in the direction of final product manufacturing, sustainable manufacturing/processing, solid-state chemical plating, etc., to avoid the use of potassium cyanide and organic additives, simple and applicable process methods, and low cost Effect

Inactive Publication Date: 2011-11-23
CENT SOUTH UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problems existing in the preparation of copper-zinc-tin-sulfur thin films by the current chemical solution method, and propose a method for preparing copper-zinc-tin-sulfur thin films by continuous ion layer adsorption reaction deposition laminated structure followed by heat treatment

Method used

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  • Preparation method of Cu-Zn-Sn-S thin film
  • Preparation method of Cu-Zn-Sn-S thin film
  • Preparation method of Cu-Zn-Sn-S thin film

Examples

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Embodiment 1

[0025] Step 1. Preparation of Cu 2 SnS x film:

[0026] 1. Preparation of cationic precursor solution: the medicines used are analytical reagents and prepared with deionized water. Weigh a certain amount of CuSO 4 , SnSO 4 and tartaric acid, mixed together to prepare a 100ml solution and placed in a 200ml beaker, in which CuSO 4 , SnSO 4 The molar concentrations of tartaric acid and tartaric acid are 0.01M / L, 0.05M / L and 1.0M / L respectively;

[0027] 2. Preparation of anion precursor solution: weigh a certain amount of Na 2S is prepared into a 100ml solution and placed in a beaker, Na 2 The molar concentration of S is 0.05M / L;

[0028] 3. Immerse the glass slides cleaned by dilute sulfuric acid, ammonia water and absolute ethanol in the mixed cation solution for surface adsorption for 20 seconds, then immerse in the flowing deionized water container for 20 seconds, and then immerse in the anion precursor Body Na 2 React in S solution for 20 seconds, and finally wash ...

Embodiment 2

[0038] Step 1. Preparation of Cu 2 S film:

[0039] 1. Preparation of cationic precursor solution: the medicines used are analytical reagents and prepared with deionized water. Weigh a certain amount of CuSO 4 and ammonia, mixed together to prepare a 100ml solution and placed in a 200ml beaker, where CuSO 4 The molar concentrations of ammonia and ammonia are 0.02M / L and 1.0M / L respectively;

[0040] 2. Preparation of anion precursor solution: weigh a certain amount of Na 2 S is prepared into a 100ml solution and placed in a beaker, Na 2 The molar concentration of S is 0.06M / L;

[0041] 3. Immerse the glass slides cleaned by dilute sulfuric acid, ammonia water and absolute ethanol in the mixed cation solution for surface adsorption for 20 seconds, then immerse in the flowing deionized water container for 20 seconds, and then immerse in the anion precursor Body Na 2 React in S solution for 20 seconds, and finally wash the glass slide with flowing deionized water for 20 se...

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Abstract

The invention discloses a preparation method of a Cu-Zn-Sn-S thin film, comprising the steps of: by adopting a successive ionic layer adsorption reaction method, sequentially or alternatively soaking one substrate in a cation precursor solution and an anion precursor solution to prepare a Cu2SnSx film and ZnS film laminated precast layer structure or a Cu2S film and ZnSnSx film laminated precast layer structure, and then performing heat treatment to obtain the Cu-Zn-Sn-S thin film; the cation precursor solution comprises at least one of copper ions, stannum ions and zinc ions, and the anion precursor solution is selected from at least one of a sodium sulfide solution, a potassium sulfide solution and an ammonium sulfide solution; the substrate is selected from one of glass, PI (polyimide), a stainless steel plate, a molybdenum plate and a titanium plate. The preparation method of Cu-Zn-Sn-S thin film not only solves the problem that the metal components are difficult to control, but also prevents the copper ions from moving to the surface of the film to form a sulfur copper phase. The preparation method is simple and applicable, low in cost and suitable for industrialization production.

Description

technical field [0001] The invention relates to a method for preparing a novel copper-zinc-tin-sulfur thin film solar cell absorbing layer material, in particular to a method for preparing a copper-zinc-tin-sulfur thin film; it belongs to the technical field of solar cell preparation. Background technique [0002] Among the new-generation thin-film solar cell materials, copper-zinc-tin-sulfur (CuZnS) has the characteristics of low cost, high efficiency and environmental friendliness. 2 ZnSnS 4 ) Thin film solar cell materials have become the focus and focus of research. As a solar cell absorber material, copper zinc tin sulfur has a suitable band gap (1.5ev) and a large light absorption coefficient (10 4 cm -1 above), and more importantly, the constituent elements of this material are abundant on the earth and are safe, non-toxic and non-polluting, so copper zinc tin sulfur is considered to be one of the most promising cheap photovoltaic materials internationally. [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C20/08H01L31/0336H01L31/18
CPCY02P70/50
Inventor 赖延清苏正华孙凯文刘芳洋贾明张治安刘业翔
Owner CENT SOUTH UNIV
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