Controlled silicon device provided with secondary conductive path and triggered with help of diodes

Abstract

The invention discloses a controlled silicon device provided with a secondary conductive path and triggered with the help of diodes. The connection and the layout of controlled silicon and diodes are optimized, and a parasitic controlled silicon path formed by diode strings is adopted to realize the secondary conduction of the controlled silicon which is triggered with the help of the diodes, thus improving a current value of a clamp point when the voltage of the controlled silicon is clamped so as to avoid the occurrence of the latch-up. The silicon controlled device is simple in structure, even in current and good in robustness, and is stable and reliable. Compared with a traditional ESD (electronic static discharge) protection scheme of diodes and MOS (metal oxide semiconductor) tubes,the controlled silicon device provided by the invention is superior in area efficiency; and compared with a traditional protection scheme for controlled silicon triggered with the help of diodes, thecontrolled silicon device provided by the invention has the advantage of low latch-up risk.

Description

technical field [0001] The invention belongs to the field of integrated circuits, and in particular relates to a thyristor device used for ESD protection of integrated circuits in a low operating voltage domain. Background technique [0002] The phenomenon of electrostatic discharge (ESD) in nature poses a serious threat to the reliability of integrated circuits. In the industry, 30% of the failures of integrated circuit products are caused by electrostatic discharge, and the increasingly smaller process size and thinner gate oxide thickness greatly increase the probability of integrated circuit damage by electrostatic discharge. Therefore, improving the reliability of integrated circuit electrostatic discharge protection has a non-negligible effect on improving the yield of products. [0003] The modes of electrostatic discharge phenomena are usually divided into four types: HBM (Human Body Model), MM (Machine Discharge Model), CDM (Component Charge Discharge Model) and Fi...

AI Technical Summary

Problems solved by technology

The diode-assisted trigger thyristor combines the low turn-on voltage of the diode and the high ESD protection capability of the thyristor to become an excellent ESD protection device, but the diode-assisted trigger thyristor still has a clamping voltage that is too low , it is prone to the risk of latch-up effect, and it needs to be improved by increasing the clamping voltage or increasing the current value of the clamping point

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