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Radio frequency transverse diffusion N-type Metal Oxide Semiconductor (MOS) tube and manufacturing method thereof

A technology of MOS tubes and manufacturing methods, applied in the field of laterally diffused metal oxide semiconductor tubes, can solve problems such as small on-resistance, failure to reach, and large breakdown voltage, so as to reduce device power consumption, eliminate bird's beak effect, and electric field The effect of distribution flattening

Active Publication Date: 2011-11-23
SUZHOU INNOTION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] This prior art radio frequency lateral diffusion N-type metal oxide semiconductor tube is simple and practical, but it does not have the largest utilization of chip area. Under the same structure size , has not yet reached the maximum breakdown voltage and minimum on-resistance

Method used

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  • Radio frequency transverse diffusion N-type Metal Oxide Semiconductor (MOS) tube and manufacturing method thereof
  • Radio frequency transverse diffusion N-type Metal Oxide Semiconductor (MOS) tube and manufacturing method thereof
  • Radio frequency transverse diffusion N-type Metal Oxide Semiconductor (MOS) tube and manufacturing method thereof

Examples

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Embodiment

[0035] Example: such as figure 2 As shown, a radio-frequency lateral diffusion N-type metal oxide semiconductor tube with a stepped shallow trench isolation structure used as a radio-frequency power device includes a heavily doped P-type substrate 10, and a lightly doped substrate 10 is provided on the P-type substrate 10. A heterogeneous P-type epitaxial layer 11, a lightly doped N-type drift region 14 is provided on the lightly doped P-type epitaxial layer 11, and the adjacent two ends of the N-type drift region 14 are located on the P-type epitaxial layer 11 A heavily doped N-type drain 15 and a lightly doped P-type channel 13 are respectively provided, and a heavily-doped N-type source 16 is provided on the P-type epitaxial layer 11 adjacent to the P-type channel 13 A heavily doped P-type sinker region 12 is set on the heavily doped P-type substrate 10 and adjacent to the N-type source 16, the P-type channel 13 and the P-type epitaxial layer 11, and the N-type drift A ...

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Abstract

The invention discloses a radio frequency transverse diffusion N-type Metal Oxide Semiconductor (MOS) tube and a manufacturing method thereof. A stepped shallow trench isolation oxidization layer is arranged on an N-type drift region; the stepped shallow trench isolation oxidization layer includes a second shallow trench isolation oxidization layer which is located above the N-type drift region and a first shallow trench isolation oxidization layer which is located above the second shallow trench isolation oxidization layer; a second field oxidization layer is coated on the surface of the stepped shallow trench isolation oxidization layer; a metallic field polar plate is coated on the surface of the first field oxidization layer; and the metallic field polar plate separates the first field oxidization layer from the second field oxidization layer. The invention provides the radio frequency transverse diffusion N-type MOS tube which is simple in structure, compatible with the existing radio frequency transverse dual-diffusion MOS technique, and has the stepped shallow trench isolation structure in the drift region, and the manufacturing method thereof, thus increasing a breakdown voltage of a semiconductor tube with unchanged on resistance in the case of the same structure size.

Description

Technical field [0001] The present invention involves a horizontal diffusion metal oxide semiconductor tube, especially the ladder grooves isolation structure radio frequency N metal oxide semiconductor tube and its manufacturing method. Background technique [0002] RF horizontal diffusion N -type metal oxide semiconductor (MOS tube) has the advantages of high power gain, high efficiency and low cost, and is widely used in the fields of mobile communication base stations, radar, navigation and other fields.RF horizontal diffusion N -type metal oxide semiconductor tube includes a light doped drift zone near the leakage area to increase the breakdown voltage.Due to the existence of light mixing drifting regions, semiconductor pipes have high pitch resistance.In order to further increase the breakdown voltage of the horizontal diffusion N -type metal oxide semiconductor tube, increase the output power, usually increase the length of the drifting area and reduce the doping concentra...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06H01L21/336H01L21/285
Inventor 高怀陈文兰田婷孙晓红王晓彧
Owner SUZHOU INNOTION TECH
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