Crystalline silicon solar cell and diffusion method thereof
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A diffusion method and cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low conversion efficiency of solar cells, and achieve uniform sheet resistance, improved uniformity, and uniform distribution
Active Publication Date: 2011-11-23
JETION SOLAR HLDG
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[0014] In the actual production process, the conversion efficiency of solar cells produced by the diffusion method in the prior ar
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Embodiment 1
[0043] This embodiment provides a diffusion method, which is mainly used in the production of crystalline silicon solar cells. The basic process is as follows: image 3 shown, including the following steps:
[0044] Step S31, putting the silicon wafer into a diffusion furnace, raising the temperature to 780°C-800°C,
[0045] Preferably it is 790°C.
[0046] Step S32, feed small nitrogen and oxygen with a volume flow ratio of 4:1 to 7:1 into the diffusion furnace through the diffusion furnace tube, and simultaneously feed large nitrogen at 5L / min to 7L / min, and keep the temperature in the diffusion furnace at 780°C ~800℃, the time is 15min~20min,
[0047] The flow rate of small nitrogen is preferably 1.3L / min, the flow rate of oxygen is preferably 0.3L / min, the flow rate of large nitrogen is preferably 5.4L / min, and the time is preferably 17min.
[0048]Step S33: 2L / min-3L / min of oxygen and 4L / min-5L / minL of large nitrogen are introduced into the diffusion furnace through th...
Embodiment 2
[0079] This embodiment provides a crystalline silicon solar cell prepared by the diffusion method described in the previous embodiment.
[0080] The PN junction depth of the solar cell is between 0.18um and 0.22um, that is, about 0.2um; the unevenness of the sheet resistance is controlled within 4%; the conversion efficiency is between 16.5% and 17.5%, and the average value can reach 16.84%.
[0081] The junction depth of the solar cell is shallower than that under the existing diffusion technology, the unevenness of the sheet resistance is also reduced a lot, and the average conversion efficiency is improved compared with the existing diffusion technology.
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Abstract
The invention discloses a crystalline silicon solar cell and a diffusion method thereof. The method comprises the following steps of: putting a silicon chip into a diffusion furnace and raising the temperature to 780-800 DEG C; introducing a preset amount of small nitrogen, oxygen and large nitrogen into the diffusion furnace through a diffusion furnace tube and keeping the internal temperature of the diffusion furnace at 780-800 DEG C for 15-20 minutes; introducing a preset amount of oxygen and large nitrogen into the diffusion furnace through the diffusion furnace tube and raising the internal temperature of the diffusion furnace to 850-870 DEG C for 10-18 minutes; and cooling the diffusion furnace and taking the silicon chip out, wherein the gas flow in the diffusion furnace tube is constant in the entire diffusion process. The depth of a PN junction of a solar cell produced with the method is small, the square resistance is more uniform, and the conversion efficiency of the solar cell is increased.
Description
technical field [0001] The invention relates to the production and processing technology of solar cells, more specifically, to a crystalline silicon solar cell and its diffusion method. Background technique [0002] In recent years, the production technology of solar cells has been continuously improved, the production cost has been continuously reduced, and the conversion efficiency has been continuously improved, making the application of photovoltaic power generation increasingly popular and developing rapidly, and gradually becoming an important source of power supply. Solar cells can convert light energy into electrical energy under sunlight irradiation to realize photovoltaic power generation. [0003] The production process of solar cells is relatively complicated. Simply put, the current production process of solar cells can be divided into the following main steps: [0004] S11. Ultrasonic cleaning, using ultrasonic waves to clean the surface of the silicon wafer; ...
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