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Metal-oxide-semiconductor field effect transistor (MOSFET) threshold voltage analytic model with Schottky source and drain double-grid structure

A threshold voltage, double-gate structure technology, applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., to achieve the effect of fast and accurate analysis

Inactive Publication Date: 2013-06-12
FUDAN UNIV
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Problems solved by technology

The traditional bulk silicon MOSFET threshold voltage model is no longer suitable, which brings new challenges to the modeling and simulation of new multi-gate nanodevices

Method used

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  • Metal-oxide-semiconductor field effect transistor (MOSFET) threshold voltage analytic model with Schottky source and drain double-grid structure
  • Metal-oxide-semiconductor field effect transistor (MOSFET) threshold voltage analytic model with Schottky source and drain double-grid structure
  • Metal-oxide-semiconductor field effect transistor (MOSFET) threshold voltage analytic model with Schottky source and drain double-grid structure

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Embodiment Construction

[0049] Calculated by our analytical model, as image 3 Shown, the present invention is to the analysis result of Schottky barrier source-drain dual-gate MOSFET threshold voltage variation with channel thickness, in the same gate oxide layer thickness t fox =t box = Under the condition of 1nm, consider the impact of Schottky barrier lowering (SBL) effect and quantum effect (QM) on the threshold voltage of the device. Such as Figure 4 As shown, in the channel length L= Under the condition of 20nm, different drain voltages are considered separately V DS =0.05 and V DS =1V, the threshold voltage varies with the ratio parameter r The change. Figure 5 with Image 6 Respectively, the variation curves of threshold voltage with doping concentration and Schottky barrier height under given parameter conditions.

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Abstract

The invention belongs to the technical field of semiconductors and particularly discloses a metal-oxide-semiconductor field effect transistor (MOSFET) threshold voltage model with a double-grid structure. The potential distribution of the MOSFET with the Schottky source and drain double-grid structure is solved, and according to a threshold voltage defining method, when voltage applied to the grids reaches the voltage value obtained when the lowest point of a conduction band on a silicon surface is coincide with the Fermi level of silicon, a threshold voltage analytic model is obtained. The threshold voltage analytic model has a simple form and is clear in physical conception, and provides a quick tool for researching a novel device with the Schottky source and drain double-grid structureby circuit stimulation software.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a model for calculating the threshold voltage of a metal-oxide-semiconductor field-effect transistor (MOSFET) with a schottky source-drain double-gate structure. Background technique [0002] With the continuous improvement of integrated circuit chip integration and the continuous reduction of device geometry, MOSFET devices have gradually developed from a planar structure to a non-planar three-dimensional structure. Among all kinds of non-traditional planar device structures, the dual-gate structure MOSFET has strong gate control ability, which can better suppress the short channel effect and reduce the static power consumption of the device. The Schottky source-drain has a smaller series resistance than the doped source-drain, so the Schottky source-drain MOSFET becomes an ideal structure for nanoscale devices. Due to the above advantages, it is particularly...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 李佩成梅光辉胡光喜倪亚路刘冉
Owner FUDAN UNIV
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