Preparation method of patterned ultraviolet shielding film
A patterning and external shielding technology, applied in semiconductor/solid-state device manufacturing, electrical components, nanotechnology, etc., can solve problems such as high substrate requirements and inability to apply polymer substrates
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0031] Such as figure 1 As shown, the method for preparing a patterned ultraviolet shielding film according to an embodiment of the present invention includes the following steps: A) providing a substrate; B) setting a hybrid patterned template with a hydrophilic pattern and a hydrophobic pattern on the surface of the substrate C) setting a shielding agent layer on the surface of the patterned template, the shielding agent being an amphiphilic surfactant with a linear structure; D) liquid-phase deposition of an ultraviolet shielding film on the template modified with the shielding agent; and E ) removing the ultraviolet shielding film deposited on the surface of the hydrophobic pattern to obtain a patterned ultraviolet shielding film.
[0032] Below, each step is described in detail.
[0033] A) Provide the substrate.
[0034] There is no particular limitation on the material of the substrate, for example, it may be formed of a silicon-based substrate, a metal substrate, a g...
example 1
[0073] 1. Provide substrate
[0074] Sonicate the polyethylene terephthalate (PET) substrate in appropriate amount of water, ethanol, and acetone in sequence, and then bake it at 90-120 degrees Celsius for 1-30 minutes to clean the surface of the substrate.
[0075] 2. A patterned template for hybridization of hydrophilic patterns and hydrophobic patterns is set on the surface of the substrate
[0076] 2.1. Form a silicon-based buffer layer on the surface of the substrate, and make the terminal group of the silicon-based buffer layer be hydroxyl
[0077] The cleaned substrate is immersed in an acetone solution of aminopropylsilane and left to stand for 1-20 minutes, washed twice with acetone after being taken out, baked at 90-120 degrees Celsius for 1-30 minutes, and irradiated with ultraviolet light for 1-30 minutes.
[0078] This step realizes the assembly of the silicon-based buffer layer on the PET substrate, and the terminal groups of the silicon-based buffer layer are h...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 