Cleaning method of metal silicide

Abstract

A method for cleaning a metal silicide, comprising: providing a semiconductor substrate, the semiconductor substrate includes a silicon surface region and a dielectric layer surface region, the silicon surface region is sequentially formed with metal silicide, metal A dielectric layer, a metal layer and a protective layer are sequentially formed on the surface area of ​​the dielectric layer; the semiconductor substrate is cleaned with an acidic oxidation solution; the semiconductor substrate is cleaned with an alkaline oxidation solution Clean up. In the metal silicide cleaning method of the present invention, after cleaning with an acidic oxidation solution, the semiconductor substrate is cleaned with an alkaline oxidation solution, which effectively removes impurity particles adhering to the surface of the substrate during the cleaning process with an acidic oxidation solution, and improves the efficiency of the semiconductor substrate. Surface cleanliness of the substrate.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and more specifically, the invention relates to a method for cleaning metal silicides. Background technique [0002] In the semiconductor chip manufacturing process, in order to improve the performance of the device, it is necessary to reduce the contact resistance between the conductive region of the semiconductor substrate and the metal interconnection material. For example, for metal-oxide-semiconductor (MOS) transistors, the source, drain, and gate usually use metal silicides with lower resistivity to reduce contact resistance. [0003] In the manufacturing process of MOS transistors, metal silicide formed in a self-aligned manner is usually used. In order to form the metal silicide, a dielectric layer is first formed on a semiconductor substrate including an active region, a drain region and a gate, and then, the dielectric layer that needs to form a self-aligned metal silicide regio...

AI Technical Summary

Problems solved by technology

[0006] However, in the actual production process, the leakage current of the MOS transistor formed by the existing technology is relatively large, and short circuits are prone to occur in some areas of the device, the reliability of the device is poor, and the yield rate is relatively low.

Images