Preparation process for anti-oxidation copper-based bonding wires
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A preparation process and bonding wire technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of bonding wire packaging, high bonding wire hardness, etc. Destruction, reduction of bonding energy, effect of high bonding performance
Active Publication Date: 2012-01-18
广东佳博电子科技有限公司
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[0005] Based on the above reasons, the applicant provides a copper-based bonding wire for the above-mentioned gold bonding wire and copper bonding wire manufacturing technology and specific problems in practical applications, which solves the problems of high price of bonding gold wire, hardness of bonding copper wire, and Oxidation, bonding wire packaging, storage and transportation, etc.
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Embodiment 1
[0028] A copper-based bonding wire, the basic material is copper, and trace metal elements such as Pt, Ce, and Pd are added to form a master alloy base material, and the surface of the metal wire made of the master alloy base material is plated with a layer of gold. Among them, the purity of copper and gold plating is higher than 99.99%.
[0029] The mass proportion of each metal component in the bonding wire material is respectively: Cu is 94.9933%, trace metal element Pt is 0.0007%, Ce is 0.002%, Pd is 0.004%, gold plating is 5%, and the diameter of the bonding wire is 50 microns , the thickness of the gold layer is 0.6 microns.
[0030] The preparation of copper-based bonding wire comprises the following steps:
[0031] Step one, mixing metal substrates. Cu with a purity higher than 99.99%, plus selected trace metal materials Pt, Ce, and Pd, is mixed as a master alloy base material, and the preliminary preparation for mixing and smelting is done.
[0032] Step 2, melting...
Embodiment 2
[0040]A copper-based bonding wire, the basic material is copper, and trace metal elements such as Pt, Ce, and Pd are added to form a master alloy base material, and the surface of the metal wire made of the master alloy base material is plated with a layer of gold. Among them, the purity of copper and gold plating is higher than 99.99%.
[0041] The mass proportion of each metal component in the bonding wire material is respectively: Cu is 95.9923%, the trace metal element Pt is 0.0007%, Ce is 0.004%, Pd is 0.003%, gold-plated gold is 4%, and the diameter of the bonding wire is 50 Micron, the thickness of the gold layer is 0.5 micron.
[0042] The preparation technology of described copper-based bonding wire comprises the following steps:
[0043] Step one, mixing metal substrates. Cu with a purity higher than 99.99%, plus selected trace metal materials Pt, Ce, and Pd, is mixed as a master alloy base material, and the preliminary preparation for mixing and smelting is done. ...
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Abstract
The invention provides anti-oxidation copper-based bonding wires, which comprise copper serving as a base material, wherein trace metal elements such as Pt, Ce and Pd are added into the copper to form a master alloy base material; the master alloy base material is made into thin wires, and a gold layer is plated on the surfaces of the thin wires to form the bonding wires; and the purities of the copper and gold are more than 99.99 percent. The invention also provides a preparation process for the bonding wires. The preparation process comprises the steps of master alloy melting, drawing, cleaning, gold plating, annealing, winding, packaging and the like. The copper-based bonding wires have the advantages of copper bonding wires and gold bonding wires, have the characteristics of high oxidation resistance and electrical conductivity and low arc stability, have higher hardness compared with a single copper material, and have the advantages of low price and the like; moreover, the copper-based bonding wires are simple and convenient to package, can be stored for a long time at normal temperature, and can meet the requirement on electronic packaging high-end development.
Description
technical field [0001] The invention relates to a bonding wire manufacturing technology, in particular to a copper-based master alloy bonding wire manufacturing technology. Background technique [0002] Bonding Wires is a key material used in the semiconductor packaging process of integrated circuits. The rapid development of the electronics industry has promoted the rapid development of bonding wire manufacturing technology. Bonding wire is a fine-diameter, high-tensile-strength metal wire that is widely used in the packaging inner leads of integrated circuits, semiconductor discrete devices, and LED light-emitting tubes. At present, in the application technology of bonding wire, alloy bonding wire, copper bonding wire, aluminum bonding wire, gold bonding wire, etc. are widely used, and the most common ones are bonding gold wire, bonding aluminum wire and copper bonding wire. Several kinds. [0003] Bonding gold wire is mostly high-purity gold fine wire with a diameter of...
Claims
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