Preparation method for aluminum silicon carbide compound material IGBT (Insulated Gate Bipolar Translator) substrate and method for inlaying aluminum alloy

Abstract

The invention relates to a preparation method for an aluminum silicon carbide compound material IGBT (Insulated Gate Bipolar Translator) substrate and a method for inlaying an aluminum alloy. The method comprises the following steps of: (1) designing a framework mould; (2) pressing a mould; (3) microwave sintering; and (4) vacuum pressure aluminizing, wherein the step of designing a framework mould comprises: designing punched or tapped parts on two opposite sides or four sides as male moulds, and designing non-punched or non-tapped parts as female moulds, thereby forming a convex-concave shape of a cavity of the framework mould; and convex-concave joints are transited by using R10-R20mm arcs; and the step of vacuum pressure aluminizing comprises: placing a part having a convex-concave side of a silicon carbide framework into an aluminizing mould vertical to an opening direction, and loading the aluminizing mould into a vacuum pressure steeping furnace while keeping an opening to be upward; and the aluminizing is performed under a 8MPa aluminizing pressure, thereby filling the silicon carbide framework and a concave part with aluminum alloys. By adopting the method, the inlaid aluminum alloys and the aluminum alloy in the silicon carbide framework are simultaneously condensed and crystallized, the connection is tight, and the aluminum alloys are inlaid in the punched or tappedparts, thereby promoting the punching or tapping efficiency.

Description

technical field [0001] The invention relates to a method for preparing an aluminum-silicon carbide composite material IGBT substrate and inlaying an aluminum alloy. Background technique [0002] Aluminum silicon carbide composite materials have the characteristics of light weight, high thermal conductivity, low thermal expansion coefficient, high specific strength, etc., and are widely used in the manufacture of electronic packaging and key components of precision instruments. In the field of electronic packaging, aluminum-silicon carbide composite materials are the best heat dissipation materials for tungsten-copper alloys. At present, the silicon carbide skeleton of the aluminum silicon carbide composite material is usually sintered in a resistance furnace in China, and then aluminum alloy is infiltrated on the silicon carbide skeleton by a vacuum pressure impregnation process, and then machined into a substrate, and punched or tapped on the specified position of the subst...

AI Technical Summary

Problems solved by technology

Since the hardness of aluminum silicon carbide composite material is second only to diamond, it is one of the difficult-to-machine materials. It is difficult to drill and tap on aluminum silicon carbide composite material, and the processing cost is high.