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System and method for controlling pressure in crystalline silicon ingot furnace

A technology of pressure control and ingot casting furnace, which is applied in the field of pressure control system of crystalline silicon ingot casting furnace, which can solve the problems of low reliability, large fluctuation of gas pressure, and affecting the quality of silicon ingots, etc., to ensure the pressure in the furnace and high precision pressure The effect of control

Active Publication Date: 2015-01-28
ADVANCED FOR MATERIALS & EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] This method can continuously adjust the vacuum pressure, but because the driving mode of the butterfly valve is electric or pneumatic, the reliability is low, and the sealing performance of the butterfly valve is easily affected, the failure rate is high, and the pressure fluctuation is large
[0012] The ingot casting process of crystalline silicon ingots requires the pressure of the ambient gas to be stable and the pressure fluctuations to be as small as possible. Through the above analysis, it can be known that the gas pressure fluctuations of the existing vacuum control system control methods are relatively large. During the ingot casting process Will seriously affect the quality of silicon ingots

Method used

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  • System and method for controlling pressure in crystalline silicon ingot furnace

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Embodiment 1

[0067] In view of the above problems, the present invention provides a pressure control system for crystalline silicon ingot furnace, referring to figure 1 , figure 1 A structural schematic diagram of a crystalline silicon ingot furnace pressure control system provided by an embodiment of the present invention, including:

[0068] Ingot casting furnace body L;

[0069] Inflatable links and exhaust links connected to the furnace body L;

[0070] The first controller connected to the gas charging link and the second controller connected to the exhaust link are used to receive the pressure information of the furnace body, and according to the pressure information, the first controller controls the The inflation speed of the inflation link and / or the second controller controls the exhaust velocity of the exhaust link, thereby maintaining a stable pressure in the furnace.

[0071] The adjustment of the controller is a kind of feedback adjustment. According to the real-time press...

Embodiment 2

[0122] Based on the above-mentioned crystalline silicon ingot furnace pressure control system, the present invention also provides a method for crystalline silicon ingot furnace pressure control, comprising the steps of:

[0123] Vacuum treatment;

[0124] At each process stage of ingot casting, the pressure value in the furnace is adjusted and maintained within the range of process requirements through the joint of gas charging link, exhaust link and controller;

[0125] Wherein, the vacuumizing process includes: pre-vacuumizing, main vacuuming and maintaining vacuum;

[0126] The joint adjustment and maintenance of the pressure value in the furnace specifically includes: collecting the pressure information in the ingot casting furnace by the first pressure sensor, and providing the information to the first controller and the second controller; the first controller and the second controller The second controller is used to receive the pressure information, compare the pressu...

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Abstract

The embodiment of the invention discloses a system and method for controlling pressure in a crystalline silicon ingot furnace. The system comprises a furnace body of an ingot furnace, an air inflation chain path and an air exhaustion chain path which are connected with the furnace body, and a first controller which is connected with the air inflation chain path and a second controller which is connected with the air exhaustion chain path, wherein the first controller and the second controller are used for receiving pressure information of the furnace body, and the pressure in the furnace is maintained to be stable through controlling an air inflation speed in the air inflation chain path by using the first controller and / or controlling an air exhaustion speed in the air exhaustion chain path by using the second controller; a first pressure sensor which is connected with the furnace body and is used for collecting the pressure information in the ingot furnace and sending the information to the first controller and the second controller. The air inflation chain path comprises a primary air inflation channel, a secondary air inflation channel and an air supply channel; and the air exhaustion chain path comprises a primary vacuumizing channel, a pre-vacuumizing channel and a vacuum-maintaining channel. With the adoption of the system provided by the invention, the stable control of the pressure in the furnace can be realized and the quality of products can be guaranteed.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing technology, and more specifically, to a pressure control system and method for a crystalline silicon ingot furnace. Background technique [0002] Silicon wafers are the carrier of solar cells, the quality of silicon wafers directly determines the conversion efficiency of solar cells, and silicon wafers are cut from crystalline silicon ingots, the quality of crystalline silicon ingots directly determines the quality of the prepared silicon Therefore, in order to make solar cells have high conversion efficiency, it is first necessary to ensure the quality of crystalline silicon ingots. [0003] The ingot casting process of crystalline silicon ingots includes five steps: heating, melting, crystal growth, annealing and cooling. The entire production process takes more than 50 hours, and in the production process, in order to ensure the quality of silicon ingots, there are s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B28/06C30B29/06
Inventor 戴煜羊建高谭兴龙
Owner ADVANCED FOR MATERIALS & EQUIP