Split type ion source extraction electrode system

Abstract

The invention relates to a split type ion source extraction electrode system, which comprises a decelerating electrode 3, a shield 2, an insulator 4, an accelerating electrode 7, a decelerating electrode connecting rod 1, an accelerating electrode connecting rod 8 and an electrode base 10, wherein the shield 2 is arranged at one side of the decelerating electrode 3, which faces to the accelerating electrode 7; the insulator 4 is arranged at one side of the accelerating electrode 7, which faces to the decelerating electrode 3; and the insulator 4 is close to the shield 2 and corresponds to the shield 2. The split type ion source extraction electrode system is characterized in that the decelerating electrode 3 is connected and fixed onto the electrode base 10 through the decelerating electrode connecting rod 1; the accelerating electrode 7 is connected and fixed onto the electrode base 10 through the accelerating electrode connecting rod 8; and in such the connecting method, the accelerating electrode 7 is capable of accurately moving front and back along the direction of an ion beam current through the front-and-back movement of the accelerating electrode connecting rod 8 when necessary. The ion source extraction electrode is stable and reliable in structure; stress strain cannot be generated between the accelerating electrode and the decelerating electrode under the overheating condition, thereby, the accuracy of the electrode cannot be lost. The split type ion source extraction electrode system also has other advantages.

Description

technical field [0001] The invention relates to a semiconductor device manufacturing control system, that is, an ion implanter, in particular to a split ion source extraction electrode system for the ion implanter. Background technique [0002] In the ion implanter of semiconductor manufacturing process equipment, the ion source extraction system is one of the key components of the whole equipment. It is combined with the ion source body to form the core component of the ion implanter—the ion source system; it determines the ion implanter Many performance indicators not only determine the extracted beam size, extracted energy, extracted beam quality and beam stability performance of the ion source system, but also determine the beam transmission efficiency and The production efficiency of the whole machine. [0003] The ion source extraction electrode system of an ion implanter generally adopts an acceleration and deceleration three-electrode structure. Repeated experiments...

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Problems solved by technology

[0004] The present invention is aimed at the problem that the lead-out electrode system is prone to thermal deformation and displacement in the existing ion implanter technology, which causes the lead-out electrode to be misaligned, and the accelerating electrode seam is affected by ion beam sputtering, which causes the change of electrode structure parameters and affects the lead-out beam current. and beam

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