Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-quality transfer method of graphene prepared by chemical vapor deposition method

A technology of chemical vapor deposition and transfer method, which is applied in the field of material science, can solve problems such as difficulty in impurity quality, impact on graphene performance and application, and complex operation, and achieve reliable and guaranteed results

Inactive Publication Date: 2012-02-15
SOUTHEAST UNIV
View PDF1 Cites 82 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Technical problem: the purpose of the present invention is to provide a high-quality transfer method for graphene prepared by chemical vapor deposition, to solve the above-mentioned problems existing in the current transfer process of graphene, Efficient, stable and high-quality transfer of complete graphene with less impurities

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0032] Transfer to a clear glass substrate:

[0033] 1. Spread a layer of PMMA evenly on the surface of the copper foil with graphene. The coating process parameters are: first low speed (600rpm) coating for 10s, then high speed (4000rpm) coating for 60s, and then heating on the heating table at 130°C 5min.

[0034] 2. Copper foil is floated on the surface of ammonium persulfate solution (1mol / L), with PMMA facing up. After the copper foil is fully dissolved, remove the PMMA / graphene with a glass sheet and float in clean water. Ultrasonic for 5-10min. Change the water 2-3 times to clean.

[0035] 3. Touch the PMMA / graphene side with a clean glass piece, gently pull the glass, the PMMA / graphene film will be adsorbed on the glass surface. Blot the edge moisture with paper, and dry the moisture in an environment of 90-100°C.

[0036] 4. Drop the anisole on the corner of the glass, so that the anisole slowly covers the entire surface of the glass. Use paper to absorb the remai...

example 2

[0039] transferred onto a silicon substrate (300nm thick SiO 2 layer):

[0040] 6. Apply a layer of PMMA evenly on the surface of the copper foil. The parameters of the coating process are: first coat at a low speed (620rpm) for 10s, then coat at a high speed (4100rpm) for 60s, and then heat on a heating table at 140°C for 5min.

[0041] 1. The copper foil floats on the surface of the ammonium persulfate solution (1mol / L), with the PMMA facing up. After the copper foil is fully dissolved, remove it with a glass piece and float in clean water. Ultrasonic for 5-10 minutes, change the water and clean it. .

[0042] 2. Touch the PMMA / graphene side with a clean silicon wafer, gently pull the silicon wafer, and the PMMA / graphene film will be adsorbed on the surface of the silicon wafer. Blot the edge moisture with paper, and dry the moisture in an environment of 90-100°C.

[0043] 3. Drop the anisole on the corner of the silicon wafer, so that the anisole slowly covers the entire...

example 3

[0046] Transfer to clear quartz substrate:

[0047] 1. Apply a layer of PMMA evenly on the surface of the copper foil with graphene. The coating process parameters are: first low-speed (620rpm) coating for 10s, then high-speed (4200rpm) coating for 60s, and then on the heating table at 130-150 ℃ heating 5min..

[0048] 2. Copper foil is floated on the surface of ammonium persulfate solution (1mol / L), with PMMA facing up. After the copper foil is fully dissolved, remove the PMMA / graphene with a glass sheet and float in clean water. Ultrasonic for 5-10min. Change the water 2-3 times to clean.

[0049] 3. Touch the PMMA / graphene side with a clean quartz plate, and gently pull the glass, the PMMA / graphene film will be adsorbed on the quartz surface. Blot the edge moisture with paper, and dry the moisture in an environment of 90-100°C.

[0050] 4. Drop the anisole on the corner of the quartz plate, so that the anisole slowly covers the entire surface of the quartz plate. Use pape...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to a high-quality transfer method of graphene prepared by a chemical vapor deposition method. The method comprises the following steps: a, spinning a polymethylmethacrylate (PMMA) thin layer having even thickness on the surface of graphene prepared on a copper foil substrate with the chemical vapor deposition method; b, dissolving the copper foil; c, laminating; and d, and removing PMMA. By using the method provided by the invention, graphene can be stably, reliably and high-quality transferred, and the impurities in graphene are less, thereby ensuring the completeness and good property of prepared graphene not to be damaged and meeting the requirement of researching and applying graphene. After the method provided by the invention is adopted, complete and less-impurity-containing graphene can be stably, reliably and high-quality transferred, and thus a reliable guarantee for representation, research and application of graphene is provided.

Description

technical field [0001] The invention belongs to the technical field of material science, and is a technology for transferring graphene to a required substrate in a complete and non-destructive manner. Background technique [0002] The research and application of graphene requires the preparation and transfer of high-quality graphene. Many graphene preparation methods have been developed. Among them, the chemical vapor deposition method can be used to prepare large-area graphene due to the ease of control of the preparation atmosphere and environment. Graphene has thus become the most effective preparation method to push graphene into practical applications. The preparation of graphene using this technology requires the use of metal catalysts (such as copper, nickel, platinum, etc.) as the growth substrate, and then the graphene prepared on the surface of the metal substrate (such as copper film or copper foil, etc.) , paste and transfer to other substrates (such as silico...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 郭新立刘建双汤铨季伟光
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com