Substrate temperature control method

Abstract

The invention provides a substrate temperature control method using a substrate holder. The substrate temperature control method comprises: (1) the first step of, before the start of a process, heating a substrate to a set temperature by using a heating unit in an electrostatic chuck and keeping the temperature constant at the set temperature until the process is started, without supplying the sealed gas into the gap between the holder and the electrostatic chuck; (2) the second step of, after the start of the process, when the temperature of the substrate is increased by a heat input from a plasma, supplying the sealed gas into the gap between the holder main body and the electrostatic chuck, maintaining the pressure of the sealed gas constant and deceasing the substrate temperature to the set temperature; and (3) the third step of, also after the start of the process, after the substrate temperature reaches the set temperature, adjusting the pressure of the sealed gas for heating the heating unit and the sealed gas supplied into the gap between the holder main body and the electrostatic chuck, and maintaining the substrate temperature at the set temperature.

Description

[0001] This application is a divisional application with an application date of July 9, 2009, an application number of 200910150087.X, and an invention name of a substrate holding device. technical field [0002] The present invention relates to a substrate holding device capable of holding a substrate by electrostatic adsorption in a vacuum container of a plasma processing apparatus and capable of controlling the temperature of the substrate. Background technique [0003] A substrate holding device (substrate support device) for holding a substrate (wafer) is provided in a vacuum container of a plasma processing device such as a sputtering device or an etching device, and usually can control the temperature of the substrate. [0004] For example, there has been proposed a substrate support device that includes a base member incorporating a heater or a cooler, and an electrostatic chuck that holds a wafer on its upper portion via a heat transfer sheet (see Patent Document 1)...

AI Technical Summary

Problems solved by technology

With this control method, the above-mentioned heat input can be controlled in a steady state, but in an environment where heat input such as plasma is generated transiently, since the thermal conductivity of the heat transfer member is as small as 0.3 to 1W / K, the temperature of the substrate Temporary rise to nearly 2 times the set temperature

In addition, it takes more than 10 seconds until the temperature is stably controlled to the set temperature.

[0017] In addition, in this temperature control method, there is the following problem: the desired process performance cannot be obtained due to the change of the substrate temperature during the process

Since the circulating medium of this kind of substrate holding device is oily, it is easy to cause pollution due to leakage and adhesion during maintenance, which is not conducive to the operation in the clean room

The cooling medium (circulating medium) is often a material with ignitable properties, and when used, there is a risk in the safety of the clean room.

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