Method for improving output peak power of semiconductor laser unit

Abstract

The invention discloses a method for improving the output peak power of a semiconductor laser unit. the method is characterized in that an optical fiber group is composed of optical fibers (different in length); a time sequence signal control module controls an optical switch to sequentially open one optical fiber in the optical fiber group and simultaneously close the other optical fibers; the time sequence signal control module simultaneously controls the laser unit to emit m optical pulses, then the m optical pulses sequentially pass through corresponding optical fibers in the optical fiber group at a time interval of the pulses, so that the optical pulses are superposed at an emitting port, thereby improving the output peak power of the semiconductor laser unit. By using the method disclosed by the invention, under the condition of not increasing the peak power of the laser unit and the number of the laser unit, the output peak power of the semiconductor laser unit is improved. The method disclosed by the invention is widely used in the military field, and mainly used for guidance, fuses, night-view optical sources, laser radars, detonating, distance measurement, reconnoiter, recognition, and the like; meanwhile, besides being applied to the military field, the method is also mainly applied to the fields of medical treatment, machining, communication, optical disks, printing, displaying, computer, and the like.

Description

technical field [0001] The invention relates to a laser, in particular to a method for increasing the output peak power of a semiconductor laser. Background technique [0002] Semiconductor laser, also known as laser diode (LD), is a device that produces stimulated emission by using a certain semiconductor material as a working substance. Its working principle is that through a certain excitation method, an unbalanced load is achieved between the energy band (conduction band and valence band) of the semiconductor material, or between the energy band of the semiconductor material and the energy level of impurities (acceptor or donor). The particle population of the flow is reversed. When a large number of electrons in the particle number inversion state recombine with holes, stimulated emission will occur. There are three main excitation methods for semiconductor lasers, namely electric injection, optical pumping and high-energy electron beam excitation. Electrically inject...

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Problems solved by technology

[0005] At present, there are two main factors that hinder the high power of LD: (1) as the injection current increases, the Joule heat generated will cause the junction temperature to rise, resulting in device degradation; (2) under high power conditions, the end face lasing area High power densities lead to sudden optical damage (COD) of the crystal material at the end face

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