Method for manufacturing gold salient points on wafer-level flip chip
A flip-chip and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of time-consuming, small-pitch bump manufacturing limitations, etc., and achieve the effect of reducing costs
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[0029] Such as Figure 1-7 As shown, a method for manufacturing gold bumps suitable for wafer-level flip chips according to the present invention is: a wafer 10 after preliminary processing, including a silicon substrate 11 , an electrode sheet 12 and a passivation layer 13 . Corresponding gold bumps 31 should be made on the electrode sheet 12 to realize electrical, mechanical and even thermal interconnection between the chip and the outside world. An adhesion layer 20 and a diffusion barrier layer 21 are provided between the gold bumps 31 and the electrode sheet 12 . Before fabrication, the wafer 10 is first cleaned to ensure that the surface of the exposed metal electrode sheet 12 is clean and no oxides appear. The adhesion layer 20, the diffusion barrier layer 21 and the wetting layer 22 are produced respectively by vacuum sputtering, deposition or electroplating. The adhesion layer 20 is required to have sufficient adhesion strength, low mechanical stress and low contact ...
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