Embedded-attenuated phase shift mask and its manufacturing method

A technology of a phase shift mask and a manufacturing method, which are applied in the field of embedded attenuated phase shift mask and its manufacturing, can solve problems such as residual sulfate ions, and achieve the effects of low production cost, few process steps, and prevention of fog-like defects.

Active Publication Date: 2014-08-13
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chromium atoms on the surface of the chromium layer are easily oxidized to generate positive chromium ions (such as Cr +3 ), the chromium ion in the positive valence state easily reacts with the sulfate ion The reaction produces chromium sulfate complexes such as Cr 2 (SO 4 ) 3 ·nH 2 O, in the process of making the embedded attenuation type phase shift mask of the prior art, the photoresist is coated on the surface of the chromium layer 203 twice, and strong sulfuric acid (H 2 SO 4 ) and hydrogen peroxide mixed solution to remove the photoresist on the surface of the chromium layer, the positive chromium ion on the surface of the chromium layer easily adsorbs the sulfate ion in the mixed solution to generate chromium sulfate complexes such as Cr 2 (SO 4 ) 3 ·nH 2 O; in addition, also can have the residue of sulfate ion in the process of forming chromium layer, therefore, the chromium layer surface of the embedded attenuation type phase-shift photomask of prior art is more easily adsorbed with respect to silicon molybdenum and silicon surface. Sulfate ion and other ions

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  • Embedded-attenuated phase shift mask and its manufacturing method
  • Embedded-attenuated phase shift mask and its manufacturing method
  • Embedded-attenuated phase shift mask and its manufacturing method

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Embodiment Construction

[0044] The following will combine Figure 4 ~ Figure 5 as well as Figure 6A ~ Figure 6L The embedded attenuation type phase shift mask of the present invention and its manufacturing method are further described in detail.

[0045] see Figure 4 The embedded attenuation type phase shift mask of the present invention includes a transparent substrate 310, a phase shift layer 320 formed on the surface of the transparent substrate 310, a light shielding layer 330 formed on the edge surface of the phase shift layer 320, and a light shielding layer formed on the surface of the transparent substrate 310. The chip pattern 350 of the isolation layer 340 on the surface of the first light-shielding layer 330 is arranged in the area of ​​the phase shift layer 320 not covered by the first light-shielding layer 330;

[0046] The area of ​​the phase shift layer 320 not covered by the light-shielding layer 330 and the isolation layer 340 may be referred to as a chip-patterned area, and the ...

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Abstract

The invention relates to an embedded-attenuated phase shift mask and its manufacturing method. The embedded-attenuated phase shift mask comprises a transparent substrate, a phase shift layer formed on the surface of the transparent substrate, a light shielding layer formed on the surface of an area without a chip pattern in the phase shift layer, and an isolating layer formed on the surface of the light shielding layer, and chip patterns in a chip pattern equipped area in the phase shift layer. The embedded-attenuated phase shift mask and its manufacturing method of the invention can prevent haze generation effectively, and have the advantages of fewer processes and low production cost.

Description

technical field [0001] The invention relates to the field of photolithography technology, in particular to an embedded-attenuated phase shift mask (embedded-attenuated phase shift mask) and a manufacturing method thereof. Background technique [0002] With the continuous reduction of the size of semiconductor components, the complexity is getting higher and higher, and the mask pattern is correspondingly more complex and dense. Compared with the traditional mask, the phase shift mask has higher resolution and depth of focus. With the development of the semiconductor manufacturing industry, the phase shift mask will gradually replace the traditional mask. [0003] see figure 1 and figure 2 , the embedded attenuation type phase shift mask (a kind of phase shift mask) of prior art comprises quartz plate 110, the phase shift layer 120 that covers on the surface of described quartz plate 110 and covers the phase shift layer 120 edge surface The chromium layer (Cr) 130 on the ...

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): G03F1/26G03F1/48G03F7/00
Inventor胡华勇
OwnerSEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP