Method for Preventing Formation of Solid Particles on Wafer Surfaces
A technology of solid particles and wafers, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems that affect the quality of silicon oxide layer or silicon nitride layer, and affect the performance of semiconductor devices, and achieve the goal of saving process costs Effect
Active Publication Date: 2016-05-04
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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[0007] However, the inventors found that using dichlorosilane (SiH 2 Cl 2 ) is used as a reaction gas to form solid particles on the silicon oxide layer or silicon nitride layer, which affects the quality of the silicon oxide layer or silicon nitride layer, and ultimately affects the performance of the formed semiconductor device
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[0032] Compared with other processes, the use of dichlorosilane (SiH 2 Cl 2 ) is more likely to generate solid particles on the surface of the silicon oxide layer and silicon nitride layer generated as the reaction gas, which affects the performance of the final semiconductor device. The inventor has found through research that there are two main reasons for the problem:
[0033] 1. After a film deposition process, there will often be unreacted dichlorosilane reaction gas remaining in the reaction chamber, and some dichlorosilane will also remain in the intake pipe corresponding to dichlorosilane. The dichlorosilane The reaction gas is easy to react with the small water droplets in the reaction chamber, and solid particles (SiH 2 O) 4 , the specific reaction equation is as follows:
[0034] 4Si 2 Cl 2 +4H 2 O→(SiH 2 O) 4 (solid)+8HCl
[0035] Wherein, the source of the water vapor is: when the wafer formed with the silicon nitride layer or the silicon oxide layer is ...
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A method for preventing solid particle formation on a wafer surface is disclosed. The method comprises the following steps: after forming a film of an oxidation silicon layer or a silicon nitride layer by using dichlorosilane as a reactant, feeding a first gas into a reaction chamber and removing the residual dichlorosilane in the reaction chamber; feeding a second gas and removing a film which is deposited on the surface of the reaction chamber. The first gas is used to remove the residual dichlorosilane in the reaction chamber so that the solid particles can not form and stick on the inner surface of the reaction chamber. Therefore, the solid particles can not form on the film which is formed through next deposition. And the second gas is fed through cooling so that the film on the inner surface of the reaction chamber can be spalled by airflow and can not fall on the surface of the wafer which is deposited next time.
Description
technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a method for preventing solid particles from forming on the wafer surface. Background technique [0002] Silicon nitride (Si 3 N 4 ), silicon oxide (SiO 2 ) thin films are widely used as dielectric materials in the field of semiconductor manufacturing. For example, in the process of manufacturing flash memory, an ONO layer is required as a dielectric material between the floating gate (FloatingGate) and the control gate (ControlGate). The "O" in the ONO layer represents a silicon oxide layer, and the ONO layer in the ONO layer The "N" stands for the silicon nitride layer. In the transistor manufacturing process, the silicon oxide layer is usually used as an interlayer dielectric layer, a gate oxide layer, etc., to electrically isolate different semiconductor structures and conductive structures. The silicon nitride layer has a high density and is usually used as an e...
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IPC IPC(8): H01L21/314
Inventor 李占斌郭国超
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP