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Microstructure with enhanced anchor

A microstructure and device technology, applied in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve problems such as difficulty in controlling undercut etching uniformity, inability to produce narrow air gap structures, etc.

Active Publication Date: 2012-04-11
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Disadvantages of this approach include: 1) difficulty in controlling the uniformity of undercut etching during fabrication, 2) creation of wide undercuts under anchor regions, and 3) inability to produce narrow air gap structures (e.g., <200nm)

Method used

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  • Microstructure with enhanced anchor
  • Microstructure with enhanced anchor
  • Microstructure with enhanced anchor

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Embodiment Construction

[0032] The present disclosure relates generally to semiconductor manufacturing. In particular, the present disclosure relates to synthetic wafer microstructured semiconductor devices and methods of manufacturing the same. In one embodiment, the present disclosure provides a semiconductor micromechanical device, such as a micro inertial sensor. In one embodiment, the present disclosure provides a complementary metal-oxide-semiconductor (CMOS) chip having a narrow air gap microstructure with enhanced anchors. Using the methods described herein, the operational characteristics and physical structure of the device are enhanced relative to conventional devices.

[0033] It should be understood, however, that the following disclosure provides many different embodiments or examples for implementing the different features of various embodiments. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, they are examples on...

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Abstract

The present disclosure provides a microstructure device with an enhanced anchor and a narrow air gap. One embodiment of the microstructure device provided herein includes a layered wafer. The layered wafer includes a silicon handle layer, a buried oxide layer formed on the handle layer, and a silicon device layer formed on the buried oxide layer. A top oxide layer is formed on the device layer. The top oxide layer, the device layer, and the buried oxide layer are etched, thereby forming trenches to create an anchor and a microstructure device in the device layer. In process of fabricating the device, a thermal oxide layer is formed along sides of the microstructure device to enclose the microstructure device in the buried oxide layer, the top oxide layer and the thermal oxide layer. Then, a poly layer is formed to fill in the trenches and enclose the anchor. After the poly layer fills in the trenches, the oxide layers enclosing the microstructure device are etched away, releasing the microstructure device.

Description

technical field [0001] The present invention relates generally to semiconductor fabrication. In particular, the present invention relates to a semiconductor device having a microstructured device including an enhanced anchor and a method of manufacturing the same. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced generations of ICs, each with smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of handling and manufacturing ICs, and similar developments in IC processing and manufacturing are required for these advances to be realized. In the course of IC evolution, functional density (eg, the number of interconnected devices per chip area) has generally increased, while geometry size (eg, the smallest component that can be created using a fabrication process) has decreased. [0003] Mi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/00B81C1/00
CPCB81B2203/0307B81C1/00063B81C1/00571B81B2203/0109H01L2224/48227
Inventor 林宗贤朱家骅郑钧文
Owner TAIWAN SEMICON MFG CO LTD