Preparation method of light absorption layer of Cu-In-Ga-Se (CIGS) film solar cell

A technology for solar cells and light-absorbing layers, which is applied in the field of solar cells and can solve problems such as the inability to accurately realize the theoretically designed energy band structure

Active Publication Date: 2013-03-20
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, traditional processes cannot precise

Method used

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  • Preparation method of light absorption layer of Cu-In-Ga-Se (CIGS) film solar cell
  • Preparation method of light absorption layer of Cu-In-Ga-Se (CIGS) film solar cell
  • Preparation method of light absorption layer of Cu-In-Ga-Se (CIGS) film solar cell

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preparation example Construction

[0061] The preparation method of the above-mentioned light-absorbing layer, by controlling the evaporation of Cu to control the interaction and diffusion of various elements deposited on the substrate, realizes the final optimized V-shaped gradient bandgap structure, and controls Ga to reach the lowest concentration position in the film.

[0062] During the evaporative deposition process, the temperature of the substrate has a certain influence on the quality of the CIGS thin film. In this embodiment, when the temperature of the substrate is maintained at 450°C to 600°C, it is conducive to the formation of larger CIGS crystal particles, so that the surface of the light absorption layer is relatively smooth, and has a good relationship with the molybdenum back electrode layer. Adhesion, and the combination with the CdS buffer layer is also good.

[0063] The second evaporation process consists of two stages:

[0064] In the first stage, the temperature of the substrate is con...

Embodiment 1

[0081] In the first stage, soda-lime glass coated with a Mo layer on the surface is provided as a substrate, and the temperature of the substrate is kept constant and kept at 250°C. The evaporation temperature of indium is 900°C and the temperature is uniformly increased by 50°C in the first stage. Gallium The evaporation temperature is 1000°C and the temperature is uniformly lowered by 40°C in the first stage, and the evaporation temperature of selenium is controlled to remain unchanged and kept at 250°C; the evaporation time of the first stage is 15min, and the first stage is formed on the Mo layer after the first stage. light absorbing layer.

[0082] The second stage: Stop evaporating indium and gallium, increase the substrate temperature to 500°C and keep it constant, keep the evaporation temperature of selenium the same as the first stage, control the evaporation temperature of copper and keep it at 1400°C; the second stage The evaporation time of the stage is about 20mi...

Embodiment 2

[0085] In the first stage, the soda-lime glass coated with Mo on the surface is provided as the substrate, the temperature of the substrate is kept constant and kept at 500°C, the evaporation temperature of indium is 900°C and the temperature is uniformly increased by 50°C in the first stage, and the temperature of the gallium is The evaporation temperature is 1000°C and the temperature is uniformly lowered by 40°C in the first stage, the evaporation temperature of selenium is controlled and kept at 250°C, the evaporation temperature of copper is kept constant and kept at 1400°C; the evaporation time of the first stage is 10min , after the end of the first stage, a light absorbing layer I is formed on the Mo layer.

[0086] The second stage: maintain the same substrate temperature as the first stage, maintain the same evaporation temperature of selenium as the first stage, maintain the same evaporation temperature of copper as the first stage, and control the initial evaporatio...

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Abstract

The invention provides at least one preparation method for accurately realizing a light absorption layer of a CIGS film solar cell with a theoretically designed energy band structure. According to the preparation method of the light absorption layer of the Cu-In-Ga-Se film solar cell, four elementary substances of Cu, In, Ga and Se are respectively evaporated at different temperatures in a grading mode, and evaporation temperatures of Ga and In are uniformly changed in a certain time, so evaporation amounts of Ga and In are actively controlled to make the content of Ga in two side parts of the light absorption layer be slightly higher than the content of Ga in the middle part of the light absorption layer. The change of the evaporation rate of above elements with the time can be accurately controlled, so the energy band structure of the CIGS can be accurately controlled, thereby the theoretically designed energy band structure can be accurately realized.

Description

【Technical field】 [0001] The invention relates to solar cell technology, in particular to a method for preparing at least one light-absorbing layer of a copper indium gallium selenium thin film solar cell. 【Background technique】 [0002] The typical structure of copper indium gallium selenide thin film solar cells is a multilayer film structure, starting from the light incident surface, including: metal gate layer (Al) / transparent electrode layer (AZO) / window layer (ZnO) / buffer layer (CdS ) / light absorbing layer (CIGS) / back electrode layer (Mo) / glass. The light-absorbing layer can be obtained by using a four-source high-temperature co-evaporation process of copper, indium, gallium, and selenium. In order to ensure sufficient absorption of incident light, the thickness of the absorbing layer is generally greater than 2 μm. [0003] During the development of copper indium gallium selenide thin film batteries, researchers found that introducing a gradient band gap into the CIG...

Claims

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Application Information

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IPC IPC(8): C23C14/24C23C14/06C23C14/16C23C14/18H01L31/18
CPCY02P70/50
Inventor 肖旭东刘壮杨春雷王晓峰
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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