Making method of transistor with metal grid

Abstract

The invention discloses a making method of a transistor with a metal grid, comprising the following steps: firstly, providing a substrate, and defining a first transistor region and a second transistor region on the substrate; then, forming a first metal oxide semiconductor transistor in the first transistor region and a second metal oxide semiconductor transistor in the second transistor region, wherein the first metal oxide semiconductor transistor is provided with a first virtually arranged grid, and the second metal oxide semiconductor transistor is provided with a second virtually arranged grid; next, forming a patterned hard mask on the second metal oxide semiconductor transistor, wherein the hard mask comprises at least one kind of metal atoms; and then, removing the first virtually arranged grid of the first metal oxide semiconductor transistor by utilizing the patterned hard mask.

Description

technical field [0001] The invention relates to a method for manufacturing a transistor, in particular to a method for manufacturing a transistor with a metal gate. Background technique [0002] In the semiconductor industry, due to the heat-resistant properties of polysilicon materials, polysilicon materials are usually used to make the gate electrodes of transistors when making typical metal oxide semiconductor (MOS) transistors, so that the source and drain regions can be used at high temperatures. Annealing together next. Second, since polysilicon can block atoms doped by ion implantation from entering the channel region, self-aligned source and drain regions can be easily re-processed at high temperature after gate patterning. [0003] However, polysilicon gates still have many disadvantages. First, compared with most metal materials, the polysilicon gate is formed with a high resistance semiconductor material. This causes the polysilicon gate to operate at a slower ...

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Problems solved by technology

[0006] However, the problem of polysilicon loss (polysilicon loss) is easily caused when the dummy gates are removed separately.

The lost polysilicon will form a groove on the top of the dummy gate, and when the metal material fills the opening occupied by the original dummy gate, the groove will be filled with metal material and block the top of the polysilicon gate at the same time, The blocked polysilicon cannot be removed smoothly in the subsequent process

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