Passivation method for surface of black silicon solar cell

A technology on the surface of solar cells and silicon wafers, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve problems such as high production costs, complex process equipment conditions, etc., to improve minority carrier life and open circuit voltage, and improve photoelectric conversion efficiency effect

Inactive Publication Date: 2012-05-02
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0005] In order to solve the problems of complex process equipment conditions and high production costs required by the existing silicon dioxide film growth method, the invention provides a method for passivating the surface of a black silicon solar cell, the method comprising:

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  • Passivation method for surface of black silicon solar cell
  • Passivation method for surface of black silicon solar cell
  • Passivation method for surface of black silicon solar cell

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Embodiment Construction

[0029] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0030] see figure 1 , the embodiment of the present invention provides a method for passivating the surface of a black silicon solar cell, the method includes the preparation of a silicon dioxide deposition solution, the cleaning of the diffused black silicon wafer and the deposition of a silicon dioxide film, which will be described in detail below The above three processes are as follows:

[0031] Step 101: select a hexafluorosilicate solution with a concentration of 30-35 wt%, and heat it to 40°C;

[0032] Such as figure 2 As shown, in this embodiment, the water bath heating method is used to heat the hexafluorosilicate solution. The main instruments used include a heating platform, a liquid container with a heat conduction chamber inside, and a stirring tank located at the bottom center of the heat conduction chamber. ...

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Abstract

The invention discloses a passivation method for the surface of a black silicon solar cell, belonging to the technical field of manufacturing of crystalline silicon solar cells. The method comprises the steps of: adding silicon dioxide powder, deionized water and boric acid powder into a hexafluosilicic acid solution respectively to prepare a silicon dioxide precipitated solution; and immersing diffused black silicon wafers into the silicon dioxide precipitation solution, and depositing and generating a layer of silicon dioxide film on the surface of the surfaces of the black silicon wafers. According to the invention, by using a liquid phase silicon dioxide deposition method, a layer of uniform and high-quality silicon dioxide film is plated on the surfaces of the black silicon wafers, so that dangling bonds on the surfaces of black silicon are better passivated, the minority carrier life of the black silicon solar cell is effectively prolonged, the open-circuit voltage of the black silicon solar cell is effectively improved, and the photoelectric conversion efficiency of the black silicon solar cell is increased.

Description

technical field [0001] The invention relates to the technical field of preparation of crystalline silicon solar cells, in particular to a passivation method for the surface of black silicon solar cells. Background technique [0002] In recent years, with the increasingly prominent energy and environmental issues, looking for a renewable clean energy has become the focus of attention. Solar energy is inexhaustible, non-polluting, renewable and clean energy, so it is favored by people. Solar cells are photoelectric devices that convert sunlight energy into electrical energy. Currently, crystalline silicon solar cells occupy more than 80% of the photovoltaic market due to their high photoelectric conversion efficiency. At present, the reflectivity of conventional solar cells after texturing is still as high as 14% (monocrystalline silicon) or 22% (polycrystalline silicon), resulting in the loss of light energy. How to further reduce the reflectivity of the surface of silicon w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 夏洋刘邦武钟思华李超波李勇滔
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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