High voltage iii-nitride semiconductor devices

Abstract

A III-N device is described has a buffer layer, a first III-N material layer on the buffer layer, a second III-N material layer on the first III-N material layer on an opposite side from the buffer layer and a dispersion blocking layer between the buffer layer and the channel layer. The first III-N material layer is a channel layer and a compositional difference between the first III-N material layer and the second III-N material layer induces a 2DEG channel in the first III-N material layer. A sheet or a distribution of negative charge at an interface of the channel layer and the dispersion blocking layer confines electrons away from the buffer layer.

Description

technical field [0001] The present invention relates to a semiconductor device fabricated on a III-nitride semiconductor. Background technique [0002] Ill-nitride-based devices have many potential material advantages over silicon-based devices for high-power electronic applications. Among others, these advantages can include larger bandgap and breakdown field, high electron mobility and low thermally generated current in a two-dimensional electron gas (2DEG). However, for III-nitride semiconductors, large homogeneous substrates are not yet widely used. Currently, Ill-nitride films are still grown by heteroepitaxial growth on suitable non-Ill-nitride substrates. [0003] Substrates commonly used to support III-nitride films are silicon carbide, sapphire, or silicon. Hetero-epitaxy can be performed using molecular beam epitaxy (MBE) or metal oxide chemical vapor deposition (MOCVD), and more recently hydride vapor phase epitaxy (HVPE). It can be difficult to grow high-qual...

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Problems solved by technology

However, defects that form deep levels in the buffer layer also diffuse into the channel layer, where they can easily trap electrons and cause current collapse

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