Method for producing multilayer film blazed grating based on electron beam lithography and X-ray exposure

A technology of electron beam lithography and blazed grating, which is applied in microlithography exposure equipment, diffraction grating, photolithographic process exposure device, etc. inefficient effect

Inactive Publication Date: 2012-05-23
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0007] In view of this, the main purpose of the present invention is to provide a method for making multilayer blazed gratings based on electron beam lithography and X-ray exposure, to solve the problem of low efficiency and low line density in the preparation of multilayer blazed gratings by mechanical scribing The problem

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  • Method for producing multilayer film blazed grating based on electron beam lithography and X-ray exposure
  • Method for producing multilayer film blazed grating based on electron beam lithography and X-ray exposure
  • Method for producing multilayer film blazed grating based on electron beam lithography and X-ray exposure

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0031] The invention uses electron beams to directly write the X-ray exposure mask, uses contact exposure, adjusts the direction of the exposure fixture to change the incident angle of X-rays, forms a blazed grating pattern on the negative photoresist, and then grows a multilayer film on the pattern , forming a multilayer film blazed grating.

[0032] Such as figure 1 as shown, figure 1 It is a flow chart of the method for making multilayer blazed gratings based on electron beam lithography and X-ray exposure provided by the present invention. The method uses electron beam direct writing to make X-ray exposure mask plates, and uses contact exposure. A blazed grating pattern is formed on the pattern, and then a multilaye...

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Abstract

The invention discloses a method for producing a multilayer film blazed grating based on electron beam lithography and X-ray exposure, comprising the following steps: producing an X-ray exposure mask by using electron beam direct writing, forming a blazed grating graphic on a negative photoresist by using contact exposure, then growing a multilayer film on the graphic to form the multilayer film blazed grating. According to the invention, the defects of low electron beam efficiency and difficult production of blaze angles are overcome, the graphic output capacity of the electron beam and the advantages of high resolution and high efficiency of the X-ray are combined; the X-ray incident angle is changed by adjusting the direction of the exposure fixture through the contact exposure, the growth of the blazed grating graphic is complete, and then the production of the multilayer film blazed grating is realized by growing the multilayer film.

Description

technical field [0001] The invention relates to the technical field of semiconductor microfabrication, in particular to a method for manufacturing multilayer film blazed gratings based on electron beam lithography and X-ray exposure. Background technique [0002] The multilayer film blazed grating is a two-dimensional artificial periodic crystal, which is prepared by etching the grating on the multilayer film or depositing a multilayer film on the surface of ordinary light. It combines the diffraction of the grating and the Bragg diffraction of the multilayer film, has new diffraction characteristics, and makes full use of the high reflection efficiency of the periodic multilayer film to improve the reflectivity of the grating at high angles of incidence, thus making the high grating The resolution is well combined with the high reflectivity of the periodic multilayer film. [0003] At present, the method of preparing multilayer blazed gratings is mainly mechanical scribing...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G03F7/00G02B5/18
Inventor 谢常青李海亮朱效立刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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