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Solar battery structure for group II to V polycrystal semiconductors and manufacture method thereof

A technology of solar cells and manufacturing methods, applied in semiconductor devices, circuits, photovoltaic power generation, etc., can solve problems such as high chip costs, achieve the effects of increasing area, improving conversion efficiency, and increasing light absorption area

Inactive Publication Date: 2012-05-30
JIFU NEW ENERGY TECH SHANGHAI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the III-V solar cells do not need to use silicon crystals, the chip cost is still relatively high, which is a problem that needs to be overcome at present.

Method used

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  • Solar battery structure for group II to V polycrystal semiconductors and manufacture method thereof
  • Solar battery structure for group II to V polycrystal semiconductors and manufacture method thereof
  • Solar battery structure for group II to V polycrystal semiconductors and manufacture method thereof

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Embodiment Construction

[0032] The above and other technical features and advantages of the present invention will be described in more detail below in conjunction with the accompanying drawings.

[0033] The present invention provides a solar cell structure of III-V semiconductors and a manufacturing method thereof. The solar cell can be applied to wall boards and roofs of buildings, etc., to receive sunlight to absorb solar energy and convert it into daily usable electrical energy .

[0034] figure 1 It is a schematic diagram of a solar cell structure 100 of the present invention, the solar cell includes a transparent substrate 10, an amorphous silicon layer 12 and at least one Group III-V polycrystalline semiconductor layer (Group III-V polycrystalline semiconductor) 14, wherein the transparent substrate 10 The material is glass, quartz, transparent plastic or single crystal alumina, and the amorphous silicon layer 12 is formed on the transparent substrate 10; the material of the III-V polycrysta...

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Abstract

The invention provides a solar battery structure for group II to V polycrystal semiconductors and a manufacture method thereof. The solar battery structure for the group II to V polycrystal semiconductors comprises a transparent base plate, an amorphous silicon layer and at least one group II to V polycrystal semiconductor layer, wherein the amorphous silicon layer is formed on the transparent base plate by using a plasma assisted chemical vapor deposition method, and the group II to V polycrystal semiconductor layer is sequentially formed on the amorphous silicon layer by a metal organic chemical vapor deposition method. Because the transparent base plate is adopted for replacing the traditional group II to V base plates, the solar battery structure and the manufacture method have the advantages that the cost can be greatly reduced, the area of the solar battery is increased, further, the light absorption area is increased, and the conversion efficiency is improved.

Description

technical field [0001] The invention relates to a solar cell structure technology, in particular to a solar cell structure of III-V semiconductors and a manufacturing method thereof. Background technique [0002] Due to the limited resources available on the earth, in order to avoid resource depletion, the solar energy industry has emerged as the times require. Solar energy is a green and sustainable energy source. The development of solar cells can store light energy and make use of it. A solar cell is a semiconductor that absorbs light or photons, and electrons are excited and transition, and the excited electrons drive the circuit to form a battery semiconductor. Various solar cell materials currently used include semiconductor types such as monocrystalline silicon, polycrystalline silicon, and amorphous silicon, or materials linked by elements of groups III, V, and II and VI. [0003] III-V solar cells, also known as concentrating solar cells, have much higher photoelec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042H01L31/0352H01L31/0392H01L31/20
CPCY02E10/50Y02P70/50
Inventor 张一熙刘吉人
Owner JIFU NEW ENERGY TECH SHANGHAI
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