Solar battery structure for group II to V polycrystal semiconductors and manufacture method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JIFU NEW ENERGY TECH SHANGHAI
- Publication Date
- 2012-05-30
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a solar cell structure technology, in particular to a solar cell structure of III-V semiconductors and a manufacturing method thereof. Background technique
[0002] Due to the limited resources available on the earth, in order to avoid resource depletion, the solar energy industry has emerged as the times require. Solar energy is a green and sustainable energy source. The development of solar cells can store light energy and make use of it. A solar cell is a semiconductor that absorbs light or photons, and electrons are excited and transition, and the excited electrons drive the circuit to form a battery semiconductor. Various solar cell materials currently used include semiconductor types such as monocrystalline silicon, polycrystalline silicon, and amorphous silicon, or materials linked by elements of groups III, V, and II and VI.
[0003] III-V solar cells, also known as concentrating solar cells, have much higher photoelec...