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Manufacture method of phase change memory

A technology of phase change memory and manufacturing method, which is applied in the field of phase change memory manufacturing, can solve the problems of low yield rate of phase change memory, and achieve the effect of improving yield rate

Active Publication Date: 2014-01-01
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] In practice, it is found that the yield rate of the existing method for making phase change memory is low

Method used

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  • Manufacture method of phase change memory
  • Manufacture method of phase change memory
  • Manufacture method of phase change memory

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Embodiment Construction

[0035] The yield rate of the phase change memory manufactured by the existing method is low. After research by the inventors, it is found that the reason for the low yield rate of the existing phase change memory is due to the contamination or natural oxide layer between the phase change layer and the bottom electrode below, so that the phase change layer is easy to contact with the bottom electrode below. Disconnection (open) affects the yield rate of the phase change memory.

[0036] Specifically, combine image 3 After the opening is formed in the third dielectric layer 107, the second bottom electrode 105 is exposed, and because the second bottom electrode 105 is exposed to air, the second bottom electrode 105 is prone to oxidation. And pollutants such as particles, water, organic matter, and inorganic matter from the clean room will cause the second bottom electrode 105 and part of the second dielectric layer 104 surface exposed by the opening to be polluted by the pollu...

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Abstract

The invention provides a manufacture method of a phase change memory. The method comprises the following steps that: a semiconductor substrate is provided, an interlayer medium layer is formed on the semiconductor substrate, a mutual connection structure and a bottom electrode are formed in the interlayer medium layer, the mutual connection structure is arranged at the same level as the interlayer medium layer, and a part of the interlayer medium layer is covered above the bottom electrode; an opening is formed in the interlayer medium layer, and the bottom electrode is exposed from the opening; an insulation layer is arranged at the side walls and the bottoms of the opening and the interlayer medium layer; a plasma etching process is carried out, the insulation layer at the bottom of the opening is removed, and the bottom electrode at the lower side is exposed; a phase change layer is formed in the opening; and the insulation layer positioned on the surface of the interlayer medium layer is removed. The qualification rate of the phase change memory is improved by the manufacture method.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a manufacturing method of a phase-change memory. Background technique [0002] Phase Change Random Access Memory (PCRAM) technology is based on the idea that S.R. Ovshinsky proposed in the late 1960s that phase change films could be applied to phase change storage media. As an emerging non-volatile storage technology, phase change memory has great advantages over flash memory in many aspects such as read and write speed, read and write times, data retention time, unit area, and multi-value realization. Become the focus of current non-volatile memory technology research. [0003] In phase-change memory, the value of the memory can be changed by heat-treating the phase-change layer on which data is recorded. The phase change material constituting the phase change layer enters a crystalline state or an amorphous state due to the heating effect of an applied electric current...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 任万春宋志棠
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP