Compound thin-film solar cell and method for producing same
A technology of solar cells and compounds, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as process constraints and difficulty in achieving large-scale applications
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no. 1 Embodiment approach
[0024] CdS is used as a buffer layer in CIGS compound thin-film solar cells with a chalcopyrite structure (group I-group III-group VI). By forming a band offset at the pn junction interface, the carrier can be reduced Compound, so as to obtain high conversion efficiency. Most CIGS-type solar cells have the following characteristics: S or Se is used as the VI group element of the light absorbing layer, and the lattice constants of the light absorbing layer and the buffer layer are close.
[0025] On the other hand, there has been little research on a light absorption layer (Te-based light absorption layer) having a chalcopyrite structure using Te instead of S or Se as a group VI element. The lattice constant of the Te-based light absorbing layer has a larger value than that of the light absorbing layer using S and Se as group VI elements. Therefore, as the Te-based buffer layer, it is necessary to select a material suitable for the Te-based light absorption layer, but it is not k...
no. 2 Embodiment approach
[0097] If the light-absorbing layer of the compound semiconductor solar cell, which is the CIGS film, is formed on the Mo back electrode by vapor deposition, MoSe will be formed on the CIGS film and the Mo back electrode 2 The middle layer of the interface. According to the fluxes or deposition process steps of Cu, In, Ga, and Se vaporized on the interface intermediate layer, the c-axis is parallel or perpendicular to the surface of the Mo back electrode. The interface intermediate layer whose crystal surface is parallel or perpendicular to the surface of the Mo back electrode has the characteristics of being easy to peel off or difficult to prevent the peeling from spreading. Therefore, there is a concern that the durability of the solar cell is affected and the conversion efficiency is reduced due to peeling. However, it is known that the intermediate layer formed on the interface between the CIGS light absorption layer and the Mo back electrode brings ohmic contact.
[0098] T...
no. 3 Embodiment approach
[0158] Although it is known that in compound thin-film solar cells, especially in CIGS solar cells, it is difficult for the grain boundaries to become the recombination centers of carriers, but in order to further improve the conversion efficiency, the light absorption layer has been required to have a larger particle size. The three-stage method is used in the vapor deposition method, and the (In, Ga) 2 Se 3 It is known to increase the particle size of the light absorption layer by supplying Cu and Se. However, the increase in particle size by the three-stage method has the disadvantage that it has a large number of steps and is difficult to apply to the formation of a light-absorbing layer by a simple sputtering method.
[0159] Therefore, focusing on the heat treatment after the light absorption layer is formed, and before the formation of the light absorption layer, a crystal growth nucleus or a crystal growth layer that can promote the crystal grain growth of the light absorp...
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