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Zener diode protection network in submount for leds connected in series

A zener diode and light emitting diode technology, which is applied in the use of semiconductor lamps, electrical components, circuits, etc., can solve the problems of insufficient surface area of ​​zener diode silicon

Active Publication Date: 2012-05-30
LUMILEDS HLDG BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when the LED die is in a small footprint (eg 1mm 2 ) are connected in series on the silicon substrate within the die, the silicon surface area under the die for forming the zener diode may be insufficient according to the design rules in principle for good transient voltage protection of the LED

Method used

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  • Zener diode protection network in submount for leds connected in series
  • Zener diode protection network in submount for leds connected in series
  • Zener diode protection network in submount for leds connected in series

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Embodiment Construction

[0027] As a preliminary matter, LEDs were formed on a growth substrate. In the example used, the LEDs are GaN-based LEDs, such as AlInGaN or InGaN LEDs, which are used to generate UV by green light. Typically, a relatively thick n-type GaN layer is grown on a sapphire growth substrate using conventional techniques. Relatively thick GaN layers typically include a low temperature nucleation layer and one or more additional layers to provide a low defect lattice structure for the n-type cladding layer and active layer. Then, one or more n-type cladding layers are formed over the thick n-type layer, followed by the active layer, one or more p-type cladding layers, and a p-type contact layer (for metallization).

[0028] For flip-chip, portions of the p-layer and active layer are etched away to expose the n-layer for metallization. In this way, the p-contact and n-contact are on the same side of the chip and can be electrically attached directly to the substrate contact pads. Cu...

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Abstract

A transient voltage suppressor circuit is disclosed for a plurality (N) of LEDs connected in series. Only one zener diode is created for connection to each node between LEDs, and a pair of zener diodes (the "end" zener diodes) are connected to the two pins (anode and cathode pads) of the series string. Therefore, only N+1 zener diodes are used. The end zener diodes (Q1and Qn+1) effectively create back-to-back zener diodes across the two pins since the zener diodes share a common p+ substrate. The n+ regions of the end zener diodes Q1 and Qn+1 have the highest breakdown voltage requirement and must be placed relatively far apart. Adjacent n+ regions of the intermediate zener diodes have a much lower breakdown voltage requirement so may be located close together. Since there are fewer zener diodes and their spacings may be small, the zener diodes may be placed within a very small footprint or can be larger for better suppressor performance.

Description

technical field [0001] The present invention relates to light emitting diodes (LEDs), and in particular to providing a zener diode network for protecting series connected LEDs from high voltage transients. Background technique [0002] It is common to protect LEDs from electrostatic discharge (ESD) or other high voltage transients by connecting back-to-back Zener diodes in parallel with the LEDs. If the reverse voltage across the LED is higher than the Zener breakdown voltage, the current is bypassed to the power supply through the Zener diode and the LED is protected. Such a protection circuit is called a transient voltage suppressor (TVS). [0003] It is common to interconnect the LED dies in series so that each LED drops the forward voltage and the LEDs operate at the same current. It is more efficient to generate high voltage and low current than high current and low voltage. Such series connections are common in high brightness applications such as lighting and backl...

Claims

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Application Information

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IPC IPC(8): H05B33/08H05B44/00
CPCH05B33/083H05B33/089Y02B20/341H01L25/0753H01L25/167H01L2224/16225H01L2924/0002H05B45/48Y02B20/30H05B45/54H05B45/50H01L2924/00
Inventor Y.韦W.D.科林斯三世D.斯泰格瓦尔德
Owner LUMILEDS HLDG BV
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