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Method for preparing nano luminescent material ZnO/SnO2 heterostructure

A technology of nano-luminescent materials and heterostructures, which is applied in the fields of luminescent materials, nano-optics, nanotechnology, etc., can solve the problems that there are no reports on heterogeneous-structured nanowire luminescent materials, and achieve high product purity, easy operation, and controllable process strong effect

Inactive Publication Date: 2012-06-20
ZHEJIANG TIANXU TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the preparation of ZnO / SnO by chemical vapor deposition 2 Heterostructure nanowire luminescent materials have not been reported yet

Method used

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  • Method for preparing nano luminescent material ZnO/SnO2 heterostructure
  • Method for preparing nano luminescent material ZnO/SnO2 heterostructure
  • Method for preparing nano luminescent material ZnO/SnO2 heterostructure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Weigh a certain amount of Sn powder and Zn powder with a molar ratio of 1:1 as the source material and place it at the front of the alumina boat, place a gold-plated silicon substrate 2 cm away from the source material, and then place the alumina boat in the middle of the tube furnace , add a refractory brick to each end of the pipe, cover (such as figure 1 ). Start the mechanical pump to make the air pressure in the tube reach -0.08MPa, close the valve, and introduce an appropriate amount of argon. When the pressure in the tube reaches an atmospheric pressure, open the valve to connect to the atmosphere, start the mechanical pump again and repeat the above operation four times to discharge the tube furnace cavity. air. Start the furnace, heat up to 950° C., feed 50 sccm (volume flow unit, meaning milliliters per minute under standard conditions) oxygen, and keep warm for 50 minutes. The furnace was naturally cooled to room temperature, the gas was turned off, the sub...

Embodiment 2

[0028] As in Example 1, take a certain amount of Sn powder and Zn powder with an electronic balance as the source material and place it on the front of the alumina boat, place a gold-plated silicon substrate at a distance of 2 cm from the source material, and then place the alumina boat on the tube furnace In the middle, a refractory brick is added to each end of the pipe, and the cover (such as figure 1 ). Start the mechanical pump to make the air pressure in the tube reach -0.08MPa, close the valve, and introduce an appropriate amount of argon. When the pressure in the tube reaches an atmospheric pressure, open the valve to connect to the atmosphere, start the mechanical pump again and repeat the above operation four times to discharge the tube furnace cavity. air. Start the furnace, heat up to 950°C, feed 50 sccm of oxygen, and keep the temperature for 70 minutes. The furnace was naturally cooled to room temperature, the gas was turned off, the substrate was taken out, an...

Embodiment 3

[0030] As in Example 1, take a certain amount of Sn powder and Zn powder with an electronic balance as the source material and place it on the front of the alumina boat, place a gold-plated silicon substrate at a distance of 2 cm from the source material, and then place the alumina boat on the tube furnace In the middle, a refractory brick is added to each end of the pipe, and the cover (such as figure 1 ). Start the mechanical pump to make the air pressure in the tube reach -0.08MP, close the valve, and introduce an appropriate amount of argon gas. When the pressure in the tube reaches an atmospheric pressure, open the valve to connect to the atmosphere, start the mechanical pump again and repeat the above operation four times to discharge the tube furnace cavity. air. Start the furnace, heat up to 1050°C, feed 50 sccm of oxygen, and keep the temperature for 50 minutes. The furnace was naturally cooled to room temperature, the gas was turned off, the substrate was taken out...

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Abstract

The invention discloses a method for preparing a nano material, in particular to a method for preparing an inorganic zinc oxide / tin oxide heterostructure material. According to a chemical vapor deposition method adopted by the invention, Sn powder and Zn powder, which serve as source materials, are placed in the front end of an alumina ship, a gold plated silicon substrate is placed at a certain distance from the source materials, the alumina ship is vacuumized and heated to a high temperature, then oxygen is introduced, the temperature is kept and the white product, namely ZnO / SnO2 heterostructure nanowire luminescent material, is formed on the substrate after cooling. The method provided by the invention has the advantages that: the process can be well controlled; the operation is easy; the cost is low; and the prepared product is very pure. The material prepared by the method can be widely used in the semiconductor industry.

Description

technical field [0001] The invention relates to a preparation method of a nanometer material, in particular to a preparation method of an inorganic material zinc oxide / tin oxide heterogeneous structure material. technical background [0002] ZnO is a wide bandgap metal oxide semiconductor material with a bandgap width of 3.37eV and an exciton binding energy of 60meV. It has great potential in optoelectronic applications. ZnO-based light-emitting diodes, photocatalysts, sensors and solar cells have been successfully prepared in the laboratory and even applied to industrial production. At present, the methods for preparing ZnO nanomaterials mainly include template method, chemical vapor deposition method, liquid phase method, solid phase method and so on. Chemical vapor deposition is a process in which a gaseous substance undergoes a chemical reaction on a solid surface to form a solid deposit. The chemical vapor phase method has the advantages of simple equipment, low cost ...

Claims

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Application Information

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IPC IPC(8): C09K11/66B82Y20/00B82Y30/00
Inventor 陈春晖
Owner ZHEJIANG TIANXU TECH
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